18628804. INTERPOSER WITH WARPAGE-RELIEF TRENCHES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
INTERPOSER WITH WARPAGE-RELIEF TRENCHES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsung-Yang Hsieh of Taipei City (TW)
Chien-Chang Lee of Miaoli County (TW)
Cheng-Kang Huang of Hsinchu (TW)
INTERPOSER WITH WARPAGE-RELIEF TRENCHES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18628804 titled 'INTERPOSER WITH WARPAGE-RELIEF TRENCHES
The abstract describes a method for forming an integrated circuit (IC) chip package structure using an interposer with warpage-reducing trenches and warpage-relief material.
- Interposer provided with front and back surfaces, routing regions, and non-routing regions.
- Warpage-reducing trenches formed in non-routing regions to reduce warpage.
- Warpage-relief material deposited in trenches to further reduce warpage.
- IC dies bonded to the front surface of the interposer for packaging.
Potential Applications: - Semiconductor industry for IC chip packaging. - Electronics manufacturing for improved chip reliability.
Problems Solved: - Reducing warpage in IC chip packages. - Enhancing reliability of integrated circuits.
Benefits: - Improved chip performance and reliability. - Enhanced structural integrity of IC chip packages.
Commercial Applications: - Semiconductor companies for advanced IC packaging. - Electronics manufacturers for high-performance devices.
Questions about the technology: 1. How does the warpage-reducing trench help in reducing warpage in IC chip packages? 2. What are the advantages of using warpage-relief material in the trenches?
Frequently Updated Research: - Ongoing research on advanced packaging techniques in the semiconductor industry.
Original Abstract Submitted
A method is provided for forming an integrated circuit (IC) chip package structure. The method includes: providing an interposer having a front surface and a back surface, the interposer comprising a substrate, at least one routing region, and at least one non-routing region; forming at least one warpage-reducing trench in the at least one non-routing region, wherein the at least one warpage-reducing trench extends from the front surface of the interposer to a first depth, the first depth smaller than a thickness between the front surface and the back surface of the interposer; depositing a warpage-relief material in the at least one warpage-reducing trench; and bonding the group of IC dies to the front surface of the interposer.
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yang Hsieh of Taipei City (TW)
- Chien-Chang Lee of Miaoli County (TW)
- Chia-Ping Lai of Hsinchu (TW)
- Wen-Chung Lu of Hsinchu (TW)
- Cheng-Kang Huang of Hsinchu (TW)
- Mei-Shih Kuo of Hsinchu (TW)
- Chih-Ai Huang of Hsinchu (TW)
- H01L23/00
- H01L21/48
- H01L25/00
- H01L25/065
- CPC H01L23/562