18628349. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18628349 titled 'PLASMA PROCESSING APPARATUS
Simplified Explanation:
The patent application describes a plasma processing apparatus that includes a chamber, a power source, a silicon member, and a conductive film. The chamber provides a space for plasma processing, the power source supplies radio-frequency power to generate plasma, the silicon member is made of a silicon-containing material and faces the plasma processing space, and the conductive film is made of a conductive material and is formed on the surface of the silicon member.
Key Features and Innovation:
- Chamber for plasma processing
- Power source for generating plasma
- Silicon member made of silicon-containing material
- Conductive film formed on the silicon member
Potential Applications: This technology could be used in semiconductor manufacturing, surface treatment of materials, and thin film deposition processes.
Problems Solved: This technology addresses the need for efficient plasma processing in various industrial applications.
Benefits:
- Improved plasma processing efficiency
- Enhanced surface treatment capabilities
- Increased control over thin film deposition processes
Commercial Applications: Potential commercial applications include semiconductor fabrication, materials science research, and industrial surface treatment processes.
Questions about Plasma Processing Apparatus: 1. How does the conductive film on the silicon member contribute to the plasma processing? 2. What are the specific advantages of using a silicon member in the plasma processing apparatus?
Frequently Updated Research: Researchers are continually exploring new materials and methods to enhance plasma processing efficiency and control. Stay updated on the latest advancements in this field for potential improvements in industrial applications.
Original Abstract Submitted
A plasma processing apparatus includes a chamber, a power source, a silicon member, and a conductive film. The chamber provides a plasma processing space. The power source supplies radio-frequency power for generating plasma in the plasma processing space. The silicon member is made of a silicon-containing material, is disposed in the chamber, and has a first surface facing the plasma processing space. The conductive film is made of a conductive material and formed on a second surface that does not face the plasma processing space of the silicon member.
