18626594. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)

SEMICONDUCTOR DEVICE

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Tatsuya Honda of Isehara (JP)

Masashi Tsubuku of Atsugi (JP)

Yusuke Nonaka of Atsugi (JP)

Takashi Shimazu of Machida (JP)

Shunpei Yamazaki of Setagaya (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18626594 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation:

This semiconductor device patent application describes a device with a gate electrode, a gate insulating film containing oxidized material with silicon, an oxide semiconductor film in contact with the gate insulating film and the gate electrode, and source and drain electrodes connected to the oxide semiconductor film. The oxide semiconductor film has a region with low silicon concentration and a crystal portion.

• The semiconductor device includes a gate electrode, gate insulating film, oxide semiconductor film, and source and drain electrodes.
• The oxide semiconductor film has a region with low silicon concentration and a crystal portion.
• The gate insulating film contains oxidized material with silicon.
• The oxide semiconductor film is in contact with the gate insulating film and the gate electrode.
• Source and drain electrodes are electrically connected to the oxide semiconductor film.

Potential Applications:

This technology could be used in the development of advanced electronic devices such as high-performance transistors, sensors, and displays.

Problems Solved:

This innovation addresses the need for improved semiconductor devices with enhanced performance and reliability.

Benefits:

The benefits of this technology include increased efficiency, better conductivity, and improved overall device performance.

Commercial Applications:

Potential commercial applications of this technology include the manufacturing of high-quality electronic devices for various industries such as consumer electronics, telecommunications, and healthcare.

Prior Art:

Readers interested in prior art related to this technology could explore research papers, patents, and industry publications in the field of semiconductor devices and materials science.

Frequently Updated Research:

Researchers are continually exploring new materials and designs for semiconductor devices to improve their performance and functionality.

Questions about Semiconductor Devices: 1. What are the key challenges in developing advanced semiconductor devices? 2. How does the silicon concentration in the oxide semiconductor film impact device performance?

Original Abstract Submitted

A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.