18626592. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)

SEMICONDUCTOR DEVICE

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Tatsuya Honda of Isehara (JP)

Masashi Tsubuku of Atsugi (JP)

Yusuke Nonaka of Atsugi (JP)

Takashi Shimazu of Machida (JP)

Shunpei Yamazaki of Setagaya (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18626592 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation:

This semiconductor device features a gate electrode, a gate insulating film with oxidized silicon material covering the gate electrode, an oxide semiconductor film in contact with the gate insulating film and the gate electrode, and source and drain electrodes connected to the oxide semiconductor film. The oxide semiconductor film has a region with low silicon concentration and a crystal portion.

• The semiconductor device includes a gate electrode, gate insulating film, oxide semiconductor film, and source and drain electrodes.
• The gate insulating film contains oxidized silicon material and covers the gate electrode.
• The oxide semiconductor film overlaps with the gate electrode and is in contact with the gate insulating film.
• A region in the oxide semiconductor film has low silicon concentration, with a crystal portion in at least one region.
• The first region in the oxide semiconductor film, with a thickness of 5 nm or less, has a silicon concentration of 1.0 at. % or lower.

Potential Applications:

1. Advanced display technologies. 2. High-performance electronic devices. 3. Efficient energy storage systems.

Problems Solved:

1. Enhancing semiconductor device performance. 2. Improving energy efficiency. 3. Increasing device reliability.

Benefits:

1. Higher device efficiency. 2. Improved overall performance. 3. Enhanced durability and longevity.

Commercial Applications:

The technology can be utilized in the development of cutting-edge electronics, such as smartphones, tablets, and smartwatches, to enhance their performance and energy efficiency.

Prior Art:

Readers interested in exploring prior art related to this technology may refer to patents and research papers in the field of semiconductor devices, oxide semiconductor films, and gate insulating materials.

Frequently Updated Research:

Researchers are continually studying the optimization of oxide semiconductor films and gate insulating materials to further improve the performance and efficiency of semiconductor devices.

Questions about Semiconductor Device Technology:

1. What are the potential environmental impacts of using semiconductor devices with advanced oxide semiconductor films?

  Advanced semiconductor devices with oxide semiconductor films can contribute to energy efficiency and reduced power consumption, leading to a positive environmental impact by lowering overall energy consumption in electronic devices.

2. How does the silicon concentration in the oxide semiconductor film affect the performance of the semiconductor device?

  The silicon concentration in the oxide semiconductor film plays a crucial role in determining the electrical properties and performance of the semiconductor device, influencing factors such as conductivity and stability.

Original Abstract Submitted

A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.