18626475. HEAT TREATMENT DEVICE AND TREATMENT METHOD simplified abstract (Tokyo Electron Limited)
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HEAT TREATMENT DEVICE AND TREATMENT METHOD
Organization Name
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HEAT TREATMENT DEVICE AND TREATMENT METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18626475 titled 'HEAT TREATMENT DEVICE AND TREATMENT METHOD
The abstract describes a heat treatment device that includes a heating plate, a chamber, a gas supply, and an exhaust port for processing metal-containing resist films on a substrate.
- Heating plate supports and heats the substrate.
- Chamber covers the processing space above the heating plate.
- Gas supply delivers gas into the chamber along a path directed towards the substrate.
- Exhaust port evacuates the chamber.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Photovoltaic cell production
Problems Solved: - Uniform heating of substrates - Controlled gas environment for processing - Efficient exhaust of gases
Benefits: - Improved film quality - Enhanced process control - Energy efficiency
Commercial Applications: - Semiconductor industry - Solar panel manufacturing - Electronics production
Questions about Heat Treatment Devices: 1. How does the gas supply system contribute to the efficiency of the heat treatment process? 2. What are the key advantages of using a chamber in conjunction with the heating plate for substrate processing?
Frequently Updated Research: - Ongoing studies on optimizing gas flow patterns for enhanced film quality - Research on the impact of different gas compositions on the heat treatment process.
Original Abstract Submitted
A heat treatment device includes: a heating plate configured to support and heat a substrate on which a metal containing resist film is formed; a chamber configured to cover a processing space above the heating plate; a gas supply configured to supply a gas into the chamber along a gas flow path connected to an inside of the chamber, the gas flow path being directed toward the substrate; and an exhaust port configured to evacuate inside of the chamber.