18624967. NON-VOLATILE MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Takashi Ishida of Yokkaichi (JP)
Yoshiaki Fukuzumi of Yokkaichi (JP)
Masaki Tsuji of Yokkaichi (JP)
NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18624967 titled 'NON-VOLATILE MEMORY DEVICE
The patent application describes a non-volatile memory device with specific structural features to enhance performance and efficiency.
- First electrodes are stacked on an underlying layer.
- A second electrode is provided on the first electrodes.
- A semiconductor layer extends in a first direction from the underlying layer to the second electrode.
- A memory film is provided between each of the first electrodes and the semiconductor layer.
- The semiconductor layer has a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode.
- The second portion has a thickness thinner than the first portion in a second direction perpendicular to the first direction.
Potential Applications: - This technology can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in data storage systems and industrial control systems.
Problems Solved: - Enhances the performance and efficiency of non-volatile memory devices. - Improves data storage capabilities in electronic devices.
Benefits: - Faster data access and retrieval. - Increased storage capacity. - Enhanced overall device performance.
Commercial Applications: Title: Advanced Non-Volatile Memory Devices for Improved Data Storage This technology can be utilized by semiconductor manufacturers to produce high-performance memory devices for consumer electronics, data centers, and industrial applications. The market implications include improved product competitiveness and increased demand for efficient memory solutions.
Questions about Non-Volatile Memory Devices: 1. How does the thickness variation in the semiconductor layer contribute to the device's performance? - The thickness variation in the semiconductor layer allows for optimized charge storage and retrieval processes, leading to faster data access and improved efficiency.
2. What are the potential challenges in implementing this technology on a large scale? - Some challenges may include manufacturing complexities, cost considerations, and ensuring compatibility with existing device architectures.
Original Abstract Submitted
According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.
