18624513. MEMORY DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
MEMORY DEVICE
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18624513 titled 'MEMORY DEVICE
The abstract describes a novel memory device with first wirings, memory element groups, and an oxide layer. Each memory element group consists of memory elements with transistors and capacitors. A second transistor is placed between adjacent memory element groups, with a high power supply potential provided to its electrodes.
- Memory device with first wirings, memory element groups, and an oxide layer
- Memory elements in each group include transistors and capacitors
- Second transistor placed between memory element groups
- High power supply potential supplied to electrodes of the second transistor
- Innovative design for efficient memory storage and retrieval
Potential Applications: - Advanced computer memory systems - High-speed data processing applications - Artificial intelligence and machine learning technologies
Problems Solved: - Enhanced memory storage capacity - Improved data processing speed - Increased efficiency in memory retrieval
Benefits: - Faster data access and retrieval - Higher memory storage capacity - Improved overall system performance
Commercial Applications: Title: "Next-Generation Memory Devices for Enhanced Data Processing" This technology can be utilized in: - Consumer electronics - Cloud computing servers - Data centers
Questions about Memory Devices: 1. How does the oxide layer contribute to the performance of the memory device? The oxide layer helps improve the efficiency of the memory elements by providing a stable interface with the semiconductor layer.
2. What advantages does the high power supply potential offer in the operation of the memory device? The high power supply potential ensures reliable and consistent operation of the memory device, leading to faster data processing speeds and improved overall performance.
Original Abstract Submitted
A novel memory device is provided. The memory device includes a plurality of first wirings extending in a first direction, a plurality of memory element groups, and an oxide layer extending along a side surface of the first wiring. Each of the memory element groups includes a plurality of memory elements. Each of the memory elements includes a first transistor and a capacitor. A gate electrode of the first transistor is electrically connected to the first wiring. The oxide layer includes a region in contact with a semiconductor layer of the first transistor. A second transistor is provided between the adjacent memory element groups. A high power supply potential is supplied to one or both of a source electrode and a drain electrode of the second transistor.
