18623956. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Eric S. Carman of San Francisco CA (US)
Karthik Sarpatwari of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
Richard E. Fackenthal of Carmichael CA (US)
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18623956 titled 'MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE
The abstract of this patent application describes an apparatus that includes two transistors and a data line, with a charge storage structure separating the first transistor's channel region from the second transistor's channel region.
- The apparatus includes a first transistor with a first channel region and a charge storage structure, as well as a second transistor with a second channel region formed over the charge storage structure.
- A data line is formed over and contacts both the first and second channel regions, with a portion adjacent to the first channel region separated by a dielectric material.
Potential Applications: - This technology could be used in memory devices, such as flash memory, where charge storage is crucial. - It could also be applied in integrated circuits for various electronic devices to improve performance and efficiency.
Problems Solved: - By separating the channel regions with a charge storage structure, this technology can enhance the functionality and reliability of transistors in electronic devices. - The data line design helps optimize the flow of information within the apparatus, leading to improved data processing capabilities.
Benefits: - Improved performance and efficiency in memory devices and integrated circuits. - Enhanced reliability and functionality of transistors in electronic devices.
Commercial Applications: Title: Advanced Transistor Technology for Memory Devices and Integrated Circuits This technology could be utilized in the development of faster and more reliable memory devices, as well as in the production of high-performance integrated circuits for various electronic applications. The market implications include increased demand for advanced semiconductor components in the tech industry.
Questions about Advanced Transistor Technology: 1. How does the separation of channel regions with a charge storage structure benefit the performance of transistors? - The separation helps prevent interference between the two regions, leading to more reliable and efficient transistor operation. 2. What potential applications beyond memory devices and integrated circuits could benefit from this technology? - Other potential applications could include sensor devices, power management systems, and communication devices.
Original Abstract Submitted
Some embodiments include apparatuses and methods forming the apparatuses. One of the apparatuses includes a first transistor including a first channel region, and a charge storage structure separated from the first channel region; a second transistor including a second channel region formed over the charge storage structure; and a data line formed over and contacting the first channel region and the second channel region, the data line including a portion adjacent the first channel region and separated from the first channel region by a dielectric material.
