18623929. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Karthik Sarpatwari of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18623929 titled 'MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES
Simplified Explanation: The patent application describes apparatuses and methods for forming memory cells with conductive regions and data lines. These memory cells include transistors with charge storage structures and are connected to conductive structures and lines.
Key Features and Innovation:
- Formation of memory cells with charge storage structures and transistors
- Use of conductive regions, data lines, and conductive structures for memory cell operation
- Integration of conductive lines as gates for transistors in the memory cells
Potential Applications: This technology could be applied in the development of advanced memory storage devices, such as non-volatile memory chips and solid-state drives.
Problems Solved: This technology addresses the need for efficient and reliable memory cell structures that can store and retrieve data effectively.
Benefits:
- Improved memory cell performance and reliability
- Enhanced data storage capabilities in electronic devices
- Potential for increased speed and efficiency in data processing
Commercial Applications: The technology could have significant commercial applications in the semiconductor industry for the production of high-performance memory devices.
Prior Art: Readers interested in prior art related to this technology may explore research on memory cell structures, transistor design, and semiconductor manufacturing processes.
Frequently Updated Research: Researchers may find updated studies on memory cell technologies, semiconductor materials, and transistor innovations relevant to this field.
Questions about Memory Cell Technology: 1. What are the key components of a memory cell in this technology? 2. How does the integration of conductive structures improve memory cell performance?
Original Abstract Submitted
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a conductive region, a first data line, a second data line, a first memory cell coupled to the first data line and the conductive region, a second memory cell coupled to the second data line and the conductive region, a conductive structure, and a conductive line. The first memory cell includes a first transistor coupled to a second transistor, the first transistor including a first charge storage structure. The second memory cell includes a third transistor coupled to a fourth transistor, the third transistor including a second charge storage structure. The conductive structure is located between and electrically separated from the first and second charge storage structures. The conductive line forms a gate of each of the first, second, third, and fourth transistors.
