18623507. METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract (Micron Technology, Inc.)

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METHODS OF FORMING MICROELECTRONIC DEVICES

Organization Name

Micron Technology, Inc.

Inventor(s)

Shuangqiang Luo of Boise ID (US)

Lifang Xu of Boise ID (US)

Xiao Li of Boise ID (US)

Jivaan Kishore Jhothiraman of Meridian ID (US)

Mohad Baboli of Boise ID (US)

METHODS OF FORMING MICROELECTRONIC DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18623507 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES

The microelectronic device described in the patent application consists of a stack structure with alternating layers of conductive and insulative materials, separated by dielectric slot structures.

  • The device includes blocks with stadium structures, filled trenches, support structures, and dielectric liner structures.
  • The stadium structure features staircase structures with steps formed by the edges of the tiers in the stack.
  • The filled trench contains a dielectric material sandwiched between additional dielectric materials.
  • Dielectric liner structures have protrusions on both the dielectric and conductive materials, with the latter having larger dimensions.

Potential Applications: - Memory devices - Electronic systems

Problems Solved: - Improved performance and efficiency in microelectronic devices - Enhanced insulation and conductivity

Benefits: - Higher functionality and reliability - Increased data storage capacity - Enhanced signal processing speed

Commercial Applications: Title: Advanced Microelectronic Devices for Memory Systems This technology can be utilized in the development of high-performance memory systems for various electronic devices, leading to faster data processing and improved overall performance. The market implications include increased demand for more efficient memory solutions in industries such as telecommunications, computing, and consumer electronics.

Prior Art: Readers can explore prior patents related to microelectronic devices, stack structures, and memory systems to gain a deeper understanding of the technological advancements in this field.

Frequently Updated Research: Stay informed about the latest research on microelectronic devices, stack structures, and memory systems to keep up with advancements and potential innovations in the industry.

Questions about Microelectronic Devices with Stack Structures: 1. How do stack structures enhance the performance of microelectronic devices?

  Stack structures improve the efficiency and functionality of microelectronic devices by providing a compact and organized layout for different materials and components.

2. What are the key features of the stadium structures in the described microelectronic device?

  Stadium structures in the device consist of staircase formations that help in creating a stable and efficient structure for the device's operation.


Original Abstract Submitted

A microelectronic device comprises a stack structure comprising an alternating sequence of conductive material and insulative material arranged in tiers, and having blocks separated by dielectric slot structures. Each of the blocks comprises a stadium structure, a filled trench overlying the stadium structure, support structures extending through the filled trench and tiers of the stack structure, and dielectric liner structures covering sidewalls of the support structures. The stadium structure comprises staircase structures each having steps comprising edges of the tiers of the stack structure. The filled trench comprises a dielectric material interposed between at least two additional dielectric materials. The dielectric liner structures comprise first protrusions at vertical positions of the dielectric material, and second protrusions at vertical positions of the conductive material of the tiers of the stack structure. The second protrusions have greater horizontal dimensions than the first protrusions. Memory devices, electronic systems, and methods are also described.