18622671. ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS simplified abstract (Micron Technology, Inc.)
ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS
Organization Name
Inventor(s)
Albert Fayrushin of Boise ID (US)
Yingda Dong of Los Altos CA (US)
George Matamis of Eagle ID (US)
ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18622671 titled 'ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS
Simplified Explanation: The patent application describes an electronic device with a unique structure involving dielectric and conductive materials, an oxide material, and a storage node within a pillar region.
- The device consists of alternating layers of dielectric and conductive materials.
- A pillar region extends vertically through the stack, containing an oxide material and a storage node.
- The storage node has a charge confinement region aligned with the conductive materials.
- The height of the charge confinement region is less than the height of the adjacent conductive materials.
Key Features and Innovation:
- Unique structure with alternating dielectric and conductive materials.
- Pillar region with oxide material and storage node.
- Charge confinement region aligned with conductive materials.
- Improved charge storage and transfer capabilities.
Potential Applications:
- Memory devices.
- Semiconductor devices.
- Integrated circuits.
Problems Solved:
- Enhanced charge storage and transfer efficiency.
- Improved device performance and reliability.
Benefits:
- Increased data storage capacity.
- Faster data transfer speeds.
- Higher device reliability.
Commercial Applications: Potential commercial applications include:
- Memory chips for electronic devices.
- Semiconductor components for computers and smartphones.
- Integrated circuits for various electronic systems.
Prior Art: Readers can explore prior art related to this technology in the field of semiconductor devices, memory storage, and integrated circuits.
Frequently Updated Research: Stay informed about the latest research developments in semiconductor device design, memory storage technologies, and integrated circuit innovations.
Questions about Electronic Devices with Unique Structure: 1. What are the key components of the unique structure described in the patent application? 2. How does the charge confinement region in the storage node contribute to the device's performance?
Original Abstract Submitted
An electronic device comprises a stack of alternating dielectric materials and conductive materials, a pillar region extending vertically through the stack, an oxide material within the pillar region and laterally adjacent to the dielectric materials and the conductive materials of the stack, and a storage node laterally adjacent to the oxide material and within the pillar region. A charge confinement region of the storage node is in horizontal alignment with the conductive materials of the stack. A height of the charge confinement region in a vertical direction is less than a height of a respective, laterally adjacent conductive material of the stack in the vertical direction. Related methods and systems are also disclosed.
