18622473. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jonghyuk Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18622473 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device described in the patent application includes various structures stacked on different regions, such as a bit line structure and a bit line capping pattern on a memory cell array region, and a peripheral gate structure on a peripheral circuit region.
Key Features and Innovation:
- Stacked structures on different regions of the semiconductor device
- Gate spacer on the side surface of the peripheral gate structure
- Material consistency between the upper bit line capping layer and the first peripheral interlayer insulating layer
Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as memory chips, processors, and other integrated circuits.
Problems Solved: The technology addresses the need for efficient and reliable semiconductor devices by providing improved structures and materials for better performance and functionality.
Benefits:
- Enhanced performance and functionality of semiconductor devices
- Improved reliability and efficiency in electronic applications
- Potential for cost savings in manufacturing processes
Commercial Applications: The technology can be utilized in the production of high-performance electronic devices, leading to advancements in consumer electronics, telecommunications, computing, and other industries.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of semiconductor device manufacturing, gate structures, and interlayer insulating layers.
Frequently Updated Research: Researchers and industry professionals can stay informed about the latest advancements in semiconductor device technology by following updates from leading semiconductor companies, research institutions, and industry conferences.
Questions about Semiconductor Device Technology: 1. What are the key challenges in developing advanced semiconductor devices with stacked structures? 2. How does the consistency of materials between different layers in a semiconductor device impact its performance and reliability?
Original Abstract Submitted
An example semiconductor device includes a bit line structure and a bit line capping pattern that are stacked on a memory cell array region. The device further includes a peripheral gate structure including a peripheral gate dielectric layer, a peripheral gate electrode, and a peripheral gate capping pattern that are stacked on a peripheral circuit region. The device further includes a gate spacer on a side surface of the peripheral gate structure, a first peripheral interlayer insulating layer covering the peripheral gate structure and the gate spacer, and a first peripheral contact plug penetrating through the first peripheral interlayer insulating layer. The bit line capping pattern includes a lower bit line capping layer and an upper bit line capping layer that are stacked. A material of the upper bit line capping layer is same as a material of the first peripheral interlayer insulating layer.
