18622153. POWER MODULE SEMICONDUCTOR DEVICE AND INVERTER EQUIPMENT, AND FABRICATION METHOD OF THE POWER MODULE SEMICONDUCTOR DEVICE, AND METALLIC MOLD simplified abstract (ROHM CO., LTD.)
POWER MODULE SEMICONDUCTOR DEVICE AND INVERTER EQUIPMENT, AND FABRICATION METHOD OF THE POWER MODULE SEMICONDUCTOR DEVICE, AND METALLIC MOLD
Organization Name
Inventor(s)
Toshio Hanada of Kyoto-shi (JP)
POWER MODULE SEMICONDUCTOR DEVICE AND INVERTER EQUIPMENT, AND FABRICATION METHOD OF THE POWER MODULE SEMICONDUCTOR DEVICE, AND METALLIC MOLD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18622153 titled 'POWER MODULE SEMICONDUCTOR DEVICE AND INVERTER EQUIPMENT, AND FABRICATION METHOD OF THE POWER MODULE SEMICONDUCTOR DEVICE, AND METALLIC MOLD
The power module semiconductor device includes an insulating substrate, a first pattern disposed on the insulating substrate, a semiconductor chip disposed on the first pattern, power terminals, and signal terminals electrically connected to the semiconductor chip, and a resin layer covering the semiconductor chip and the insulating substrate. The signal terminal is extended vertically with respect to the main surface of the insulating substrate.
- Insulating substrate
- First pattern
- Semiconductor chip
- Power terminals
- Signal terminals
- Resin layer
Potential Applications: - Power electronics - Automotive industry - Renewable energy systems
Problems Solved: - Efficient power distribution - Improved heat dissipation - Enhanced electrical connectivity
Benefits: - Higher power efficiency - Increased reliability - Compact design
Commercial Applications: - Power inverters - Electric vehicles - Solar inverters
Questions about the technology: 1. How does the vertical orientation of the signal terminal improve performance? 2. What materials are commonly used in the resin layer for semiconductor devices?
Frequently Updated Research: - Ongoing advancements in power module design - New materials for improved thermal management
Original Abstract Submitted
The power module semiconductor device () includes: an insulating substrate (); a first pattern () (D) disposed on the insulating substrate (); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer () configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.
