18622003. SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
Contents
SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS
Organization Name
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor(s)
Kazuhiko Nakadate of Kanagawa (JP)
Toshifumi Wakano of Kanagawa (JP)
Masahiko Nakamizo of Kanagawa (JP)
SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18622003 titled 'SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS
Simplified Explanation: The patent application describes a solid-state imaging element with improved driving of transistors. It includes electric charge accumulating sections, transfer sections, and transistors to output signals based on accumulated electric charge.
Key Features and Innovation:
- Pixel sharing type solid-state imaging element
- Improved driving of transistors
- Arrangement of electric charge accumulating sections in a predetermined direction
- Transfer sections for transferring electric charge from photoelectric conversion elements
- Transistors for outputting signals based on accumulated electric charge
Potential Applications: This technology can be used in digital cameras, smartphones, security cameras, and other imaging devices.
Problems Solved: The technology addresses issues related to efficient driving of transistors in solid-state imaging elements.
Benefits: Improved performance and efficiency in capturing and processing images, leading to better image quality in electronic devices.
Commercial Applications: Potential commercial applications include the consumer electronics industry, surveillance systems, medical imaging devices, and industrial inspection equipment.
Prior Art: Readers can explore prior patents related to solid-state imaging elements, transistor driving techniques, and pixel sharing technologies.
Frequently Updated Research: Stay updated on advancements in solid-state imaging technology, transistor design, and image processing algorithms for improved performance.
Questions about Solid-State Imaging Elements: 1. How does the improved driving of transistors impact the overall performance of the imaging element? 2. What are the potential future developments in solid-state imaging technology?
Original Abstract Submitted
A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.
