18620262. METHODS AND APPARATUS TO REDUCE EXTREME ULTRAVIOLET LIGHT FOR PHOTOLITHOGRAPHY simplified abstract (Intel Corporation)

METHODS AND APPARATUS TO REDUCE EXTREME ULTRAVIOLET LIGHT FOR PHOTOLITHOGRAPHY

Organization Name

Intel Corporation

Inventor(s)

Marvin Paik of Portland OR (US)

Charles H. Wallace of Portland OR (US)

Leonard Guler of Hillsboro OR (US)

Elliot N. Tan of Portland OR (US)

Shengsi Liu of Portland OR (US)

Vivek Vishwakarma of Brush Priarie WA (US)

Izabela Samek of Hillsboro OR (US)

Mohammadreza Soleymaniha of Cedar Park TX (US)

METHODS AND APPARATUS TO REDUCE EXTREME ULTRAVIOLET LIGHT FOR PHOTOLITHOGRAPHY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18620262 titled 'METHODS AND APPARATUS TO REDUCE EXTREME ULTRAVIOLET LIGHT FOR PHOTOLITHOGRAPHY

Simplified Explanation: The patent application describes a lithography apparatus that uses both ultraviolet (UV) and extreme ultraviolet (EUV) light sources to create patterns on a photoresist layer.

• UV source exposes the photoresist layer to UV light.
• EUV source, coupled to the UV source, exposes the photoresist layer to EUV light via a photomask.
• Combination of UV and EUV light creates a pattern on the photoresist layer when a developer solution is applied.

Key Features and Innovation:

• Utilizes both UV and EUV light sources for lithography.
• Enables precise patterning on a photoresist layer.
• Enhances the efficiency and accuracy of the lithography process.

Potential Applications:

• Semiconductor manufacturing.
• Microelectronics industry.
• Nanotechnology research.

Problems Solved:

• Improves the resolution and quality of patterns in lithography.
• Enhances the overall performance of the lithography process.
• Enables advanced manufacturing techniques in various industries.

Benefits:

• Higher precision in patterning.
• Increased efficiency in lithography processes.
• Enhanced quality of manufactured products.

Commercial Applications: The technology can be applied in semiconductor fabrication facilities, research institutions, and companies specializing in microelectronics production. It has the potential to revolutionize the way patterns are created on photoresist layers, leading to advancements in various industries.

Questions about Lithography Apparatus: 1. How does the combination of UV and EUV light improve the patterning process? 2. What are the potential implications of this technology on the semiconductor industry?

Frequently Updated Research: Researchers are constantly exploring new ways to optimize the use of UV and EUV light sources in lithography processes to further enhance precision and efficiency. Stay updated on the latest advancements in this field for potential breakthroughs in manufacturing technologies.

Original Abstract Submitted

Apparatus and methods are disclosed. An example lithography apparatus includes an ultraviolet (UV) source to expose a photoresist layer to UV light; and an extreme ultraviolet (EUV) source coupled to the UV source, the EUV source to expose the photoresist layer to EUV light to via a photomask, a combination of the UV light and the EUV light provide a pattern on the photoresist layer when a developer solution is applied to the photoresist layer.