18620107. PHOTOMASKS HAVING INTERMEDIATE BARRIER LAYERS simplified abstract (Intel Corporation)
Contents
PHOTOMASKS HAVING INTERMEDIATE BARRIER LAYERS
Organization Name
Inventor(s)
Yongbae Kim of San Jose CA (US)
PHOTOMASKS HAVING INTERMEDIATE BARRIER LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18620107 titled 'PHOTOMASKS HAVING INTERMEDIATE BARRIER LAYERS
The abstract of the patent application describes photomasks with intermediate barrier layers. These photomasks consist of a substrate with a multilayer region, including alternating layers of different materials, a capping layer, and an intermediate layer separating the capping layer and the substrate.
- Photomasks with intermediate barrier layers
- Substrate with a multilayer region
- Alternating layers of different materials
- Capping layer
- Intermediate layer separating capping layer and substrate
Potential Applications: - Semiconductor manufacturing - Photolithography processes - Integrated circuit fabrication
Problems Solved: - Enhanced precision in patterning - Improved durability of photomasks - Reduction of defects in semiconductor devices
Benefits: - Higher quality semiconductor products - Increased efficiency in manufacturing processes - Cost-effective production of integrated circuits
Commercial Applications: Title: "Advanced Photomasks for Semiconductor Manufacturing" This technology can be utilized in the production of various semiconductor devices, such as microprocessors, memory chips, and sensors. The market implications include improved performance and reliability of electronic products, leading to increased demand in the semiconductor industry.
Questions about Photomasks with Intermediate Barrier Layers: 1. How do photomasks with intermediate barrier layers improve semiconductor manufacturing processes? 2. What are the key advantages of using an intermediate layer in photomask fabrication?
Frequently Updated Research: Researchers are continuously exploring new materials and techniques to further enhance the performance and efficiency of photomasks in semiconductor manufacturing. Stay updated on the latest developments in this field to leverage the benefits of advanced photomask technologies.
Original Abstract Submitted
Photomasks having intermediate barrier layers are disclosed. An example photomask comprises a substrate including a multilayer region, the multilayer region including alternating layers of a first material and a second material different from the first material, a capping layer, and an intermediate layer separating the capping layer and the substrate, the intermediate layer including a third material different from the first material and different from the second material.
