18620002. Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
Contents
Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
John D. Hopkins of Meridian ID (US)
Jordan D. Greenlee of Boise ID (US)
Nancy M. Lomeli of Boise ID (US)
Alyssa N. Scarbrough of Boise ID (US)
Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 18620002 titled 'Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
The memory array described in the patent application consists of memory blocks arranged laterally, with each block containing a vertical stack of alternating insulative tiers and conductive tiers. Channel-material strings of memory cells run through these tiers. Intervening material is present between and along the immediately adjacent memory blocks, with the lowest conductive tier containing intervenor material. Bridges made of a different composition from the intervenor material extend laterally between the adjacent memory blocks, spaced apart by the intervenor material.
- Memory array with laterally-spaced memory blocks
- Vertical stack structure with alternating insulative and conductive tiers
- Channel-material strings of memory cells running through the tiers
- Intervening material between and along immediately adjacent memory blocks
- Bridges of different composition extending laterally between memory blocks
Potential Applications: - High-density memory storage devices - Semiconductor manufacturing - Data storage systems
Problems Solved: - Increased memory array density - Enhanced data storage capabilities - Improved semiconductor device performance
Benefits: - Higher memory capacity - Faster data access speeds - More efficient semiconductor devices
Commercial Applications: The technology described in the patent application could be utilized in the development of advanced memory storage devices for consumer electronics, data centers, and other high-tech applications. Its high-density memory array design offers significant advantages in terms of performance and storage capacity.
Questions about the technology: 1. How does the composition of the bridges differ from the intervenor material? 2. What are the potential implications of this memory array design for the semiconductor industry?
Original Abstract Submitted
A memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material in a lowest of the conductive tiers comprises intervenor material. Bridges extend laterally-between the immediately-laterally-adjacent memory blocks. The bridges comprise bridging material that is of different composition from that of the intervenor material. The bridges are longitudinally-spaced-along the immediately-laterally-adjacent memory blocks by the intervenor material and extend laterally into the immediately-laterally-adjacent memory blocks. Other embodiments, including method, are disclosed.
