18618451. SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES
Organization Name
Inventor(s)
Kwang Ho Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18618451 titled 'SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES
The semiconductor device described in the patent application consists of multiple blocks on a substrate with trenches in between. Conductive patterns are located inside the trenches, and the outermost trench is at a higher level than the adjacent trench. Each block contains insulating layers and gate electrodes stacked alternately, with pillars passing through them vertically.
- The semiconductor device features blocks with alternating insulating layers and gate electrodes.
- Trenches are present between the blocks, with conductive patterns inside.
- Pillars pass through the insulating layers and gate electrodes vertically.
- The outermost trench is at a higher level than the adjacent trench.
- The design allows for efficient and compact semiconductor device construction.
Potential Applications: This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as in smartphones, computers, and other consumer electronics.
Problems Solved: This innovation addresses the need for more efficient and compact semiconductor devices with improved performance and functionality.
Benefits: The benefits of this technology include enhanced device performance, increased efficiency in semiconductor manufacturing, and the potential for smaller and more powerful electronic devices.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, offering manufacturers the opportunity to produce cutting-edge electronic devices with improved performance and functionality.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of semiconductor device manufacturing and design.
Frequently Updated Research: Stay informed about the latest advancements and research in semiconductor device manufacturing to understand how this technology continues to evolve and improve.
Questions about Semiconductor Device Innovation: 1. What are the key features of the semiconductor device described in the patent application? 2. How does the design of this semiconductor device contribute to improved performance and efficiency in electronic devices?
Original Abstract Submitted
A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.
