18616403. DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Junichiro Sakata of Atsugi (JP)
Toshinari Sasaki of Atsugi (JP)
DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18616403 titled 'DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF
Simplified Explanation: The patent application describes a display device that uses transistors with stable electric characteristics. It involves a manufacturing process where a gate electrode is added to improve stability, especially in the driver circuit transistors. Additionally, heat treatment is applied to the oxide semiconductor layer to reduce impurities and enhance performance.
- Gate electrode added to transistors for stability
- Heat treatment of oxide semiconductor layer to reduce impurities
- Improved performance and stability in display device transistors
Key Features and Innovation: - Use of gate electrode for stability - Heat treatment of oxide semiconductor layer - Reduction of impurities for improved performance
Potential Applications: - Display devices - Electronics manufacturing - Semiconductor industry
Problems Solved: - Instability in transistor operation - Presence of impurities affecting performance - Manufacturing challenges in oxide semiconductor layers
Benefits: - Enhanced stability in display devices - Improved transistor performance - Reduction of impurities for better functionality
Commercial Applications: Title: Enhanced Stability in Display Device Transistors This technology can be applied in the production of various display devices, such as smartphones, tablets, and televisions, to ensure stable and reliable performance. It can also benefit manufacturers in the semiconductor industry by providing a solution to common challenges in oxide semiconductor layer manufacturing.
Questions about Enhanced Stability in Display Device Transistors: 1. How does the addition of a gate electrode improve stability in transistors? 2. What are the specific benefits of reducing impurities in the oxide semiconductor layer?
Frequently Updated Research: There may be ongoing research in the semiconductor industry related to improving the stability and performance of transistors in display devices. Researchers may be exploring new methods of reducing impurities and enhancing the functionality of oxide semiconductor layers.
Original Abstract Submitted
An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
