18616006. VOLTAGE BIN CALIBRATION BASED ON A VOLTAGE DISTRIBUTION REFERENCE VOLTAGE simplified abstract (Micron Technology, Inc.)

VOLTAGE BIN CALIBRATION BASED ON A VOLTAGE DISTRIBUTION REFERENCE VOLTAGE

Organization Name

Micron Technology, Inc.

Inventor(s)

Kishore Kumar Muchherla of San Jose CA (US)

Devin M. Batutis of San Jose CA (US)

Xiangang Luo of Fremont CA (US)

Mustafa N. Kaynak of San Diego CA (US)

Peter Feeley of Boise ID (US)

Sivagnanam Parthasarathy of Carlsbad CA (US)

Sampath Ratnam of Boise ID (US)

Shane Nowell of Boise ID (US)

VOLTAGE BIN CALIBRATION BASED ON A VOLTAGE DISTRIBUTION REFERENCE VOLTAGE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18616006 titled 'VOLTAGE BIN CALIBRATION BASED ON A VOLTAGE DISTRIBUTION REFERENCE VOLTAGE

Simplified Explanation:

The patent application discusses determining a voltage shift for memory cells in a block family based on initial and subsequent reference values. The amount of voltage shift determines whether the block family is associated with a first or second voltage bin, each with its own voltage offset.

• Memory cells in a block family have their voltage shift determined based on reference values.
• The amount of voltage shift categorizes the block family into a first or second voltage bin.
• Each voltage bin is associated with a specific voltage offset.

Key Features and Innovation:

• Voltage shift determination for memory cells in a block family.
• Categorization into voltage bins based on the determined voltage shift.
• Association of voltage bins with specific voltage offsets.

Potential Applications:

This technology could be applied in the development of more efficient and optimized memory systems, particularly in the field of semiconductor memory devices.

Problems Solved:

This technology addresses the need for precise voltage control in memory cells to improve overall performance and reliability of memory systems.

Benefits:

• Enhanced performance and reliability of memory systems.
• Improved efficiency and optimization in memory technology.

Commercial Applications:

Title: Voltage Shift Determination Technology for Memory Cells

This technology could have significant commercial applications in the semiconductor industry, particularly in the development of advanced memory systems for various electronic devices. The market implications include improved memory performance, increased reliability, and potential cost savings in memory system design and production.

Questions about Voltage Shift Determination Technology for Memory Cells:

1. What are the potential implications of this technology in the semiconductor industry? 2. How does this technology contribute to the advancement of memory systems in electronic devices?

Original Abstract Submitted

An amount of voltage shift is determined for one or more memory cells of a block family based on an initial reference value pertaining to the one or more memory cells and a subsequent reference value pertaining to the one or more memory cells. The block family is associated with a first voltage bin or a second voltage bin based on the determined amount of voltage shift. The first voltage bin is associated with a first voltage offset and the second voltage bin is associated with a second voltage offset.