18615521. RRAM CIRCUIT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
RRAM CIRCUIT
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chung-Cheng Chou of Hsinchu (TW)
Pei-Ling Tseng of Hsinchu (TW)
RRAM CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18615521 titled 'RRAM CIRCUIT
The abstract describes a resistive random-access memory (RRAM) circuit that includes various components such as transistors, an RRAM device, an amplifier, a current source, and a comparator.
- The circuit features a current source that outputs a first current, which is utilized by the first n-type transistor.
- The first n-type transistor has a drain terminal that receives the first current, while the second and third n-type transistors have drain terminals connected to the output terminal of the RRAM device.
- An amplifier in the circuit has a non-inverting input linked to the first drain terminal and an inverting input that receives a first reference voltage level.
- The output of the amplifier is connected to the gates of the first through third n-type transistors.
- A fourth n-type transistor is positioned between the second n-type transistor and a power supply reference node.
- A comparator in the circuit has a non-inverting input receiving a second reference voltage level, an inverting input linked to the second and third drain terminals, and an output connected to the gate of the fourth n-type transistor.
Potential Applications: - This RRAM circuit can be used in various memory applications where non-volatile and low-power consumption memory is required. - It can also find applications in neuromorphic computing and artificial intelligence systems due to its ability to mimic synaptic behavior.
Problems Solved: - The circuit addresses the need for a reliable and efficient RRAM circuit design that can be integrated into various electronic devices. - It solves the challenge of developing memory systems with low power consumption and high performance.
Benefits: - Low power consumption - High performance - Non-volatile memory storage
Commercial Applications: Title: Innovative RRAM Circuit for Low-Power Memory Applications This technology can be utilized in smartphones, IoT devices, and other portable electronics to enhance memory storage capabilities while reducing power consumption.
Questions about RRAM Circuits: 1. How does the RRAM circuit improve memory storage in electronic devices? - The RRAM circuit enhances memory storage by providing a non-volatile and low-power consumption solution for various applications.
2. What are the key components of the RRAM circuit and how do they work together? - The key components include transistors, an RRAM device, an amplifier, a current source, and a comparator, which work together to enable efficient memory operations.
Original Abstract Submitted
A resistive random-access memory (RRAM) circuit includes a current source configured to output a first current, a first n-type transistor including a first drain terminal configured to receive the first current, an RRAM device, second and third n-type transistors including respective second and third drain terminals coupled to an output terminal of the RRAM device, an amplifier including a non-inverting input coupled to the first drain terminal, an inverting input configured to receive a first reference voltage level, and an output coupled to a gate of each of the first through third n-type transistors, a fourth n-type transistor coupled between the second n-type transistor and a power supply reference node, and a comparator including a non-inverting input configured to receive a second reference voltage level, an inverting input coupled to each of the second and third drain terminals, and an output coupled to a gate of the fourth n-type transistor.
