18614804. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18614804 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation: The patent application describes an integrated circuit device with a unique structure involving a fin-type active region, nanosheets, gate lines, source/drain regions, and inner spacers.
- The device has a fin-type active region that protrudes from a substrate and contains nanosheets separated from each other vertically.
- A gate line surrounds the nanosheets and includes sub-gate portions between the nanosheets and a main gate portion above them.
- Source/drain regions are connected to the nanosheets and located adjacent to the gate line.
- Inner spacers are placed between the gate line and the source/drain regions, with different shapes for those facing the sub-gate portions and the main gate portion.
Key Features and Innovation:
- Fin-type active region with nanosheets for enhanced performance.
- Gate line design for precise control and operation.
- Source/drain regions connected to nanosheets for efficient electron flow.
- Unique inner spacer shapes for optimized functionality.
Potential Applications:
- Advanced semiconductor devices.
- High-performance computing systems.
- Next-generation electronics.
Problems Solved:
- Improved transistor performance.
- Enhanced control over electron flow.
- Increased efficiency in integrated circuits.
Benefits:
- Higher processing speeds.
- Lower power consumption.
- Greater reliability in electronic devices.
Commercial Applications: The technology can be utilized in the development of cutting-edge smartphones, tablets, laptops, and other consumer electronics. It also has potential applications in the automotive industry for advanced driver assistance systems and autonomous vehicles.
Questions about the Technology: 1. How does the unique structure of the device contribute to its overall performance? 2. What are the specific advantages of using nanosheets in the fin-type active region?
Original Abstract Submitted
An integrated circuit device includes a fin-type active region that protrudes from a substrate and extends in a first horizontal direction, a plurality of nanosheets disposed on the fin-type active region and separated from each other in the vertical direction, a gate line that extends in a second horizontal direction and that surrounds the plurality of nanosheets on the fin-type active region, and includes respective sub-gate portions between the plurality of nanosheets and a main gate portion above the uppermost layer of the plurality of nanosheets, a source/drain region disposed on the fin-type active region, adjacent to the gate line, and connected to the plurality of nanosheets, and a plurality of inner spacers interposed between the gate line and the source/drain region. The shapes of first inner spacers that face the sub-gate portions differ from the shape of a second inner spacer that faces the main gate portion.
