18614718. ELECTRONIC DEVICE simplified abstract (InnoLux Corporation)
Contents
ELECTRONIC DEVICE
Organization Name
Inventor(s)
Ming-Jou Tai of Miaoli County (TW)
Chia-Hao Tsai of Miaoli County (TW)
Yi-Shiuan Cherng of Miaoli County (TW)
ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18614718 titled 'ELECTRONIC DEVICE
The abstract of the patent application describes an electronic device with a transistor that includes a semiconductor layer, a gate insulating layer, a gate electrode, a first electrode, and a second electrode. The gate insulating layer has first and second contact holes, with the first and second electrodes contacting the semiconductor layer through these holes. The distances between the electrodes and the gate electrode, as well as the semiconductor layer and the gate electrode, are specified.
- The electronic device includes a transistor with specific layers and electrodes.
- The first and second electrodes contact the semiconductor layer through contact holes in the gate insulating layer.
- Distances between the electrodes and the gate electrode, as well as the semiconductor layer and the gate electrode, are defined.
Potential Applications: - This technology can be applied in the manufacturing of advanced electronic devices. - It can be used in the development of high-performance transistors for various applications in electronics.
Problems Solved: - Provides a solution for precise contact between electrodes and the semiconductor layer. - Ensures proper functioning of the transistor by defining specific distances between components.
Benefits: - Enhances the performance and reliability of electronic devices. - Enables the production of more efficient transistors for different electronic applications.
Commercial Applications: Title: Advanced Transistor Technology for Enhanced Electronic Devices This technology can be utilized in the production of smartphones, tablets, computers, and other electronic devices that require high-performance transistors. It can also benefit the semiconductor industry by improving the efficiency of electronic components.
Questions about the technology: 1. How does this technology improve the performance of electronic devices? - This technology enhances the functionality and reliability of electronic devices by ensuring precise contact between components. 2. What are the potential applications of this advanced transistor technology? - The technology can be applied in various electronic devices to improve their performance and efficiency.
Original Abstract Submitted
An electronic device includes a substrate and a transistor disposed on the substrate. The transistor includes a semiconductor layer, a gate insulating layer, a gate electrode, a first electrode and a second electrode. The gate insulating layer has first contact holes and second contact holes. The first electrode and the second electrode are disposed on the gate electrode and respectively contact the semiconductor layer through the first contact holes and the second contact holes. A minimum distance between a first side of the first electrode and the gate electrode is less than a minimum distance between a first edge of one of the first contact holes and the gate electrode, and a minimum distance between a first side edge of the semiconductor layer and the gate electrode is less than a minimum distance between the first edge of the one of the first contact holes and the gate electrode.
