18614180. SEMICONDUCTOR MEMORY STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR MEMORY STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wen-Chun Keng of Hsinchu County (TW)
Chang-Ta Yang of Hsinchu City (TW)
SEMICONDUCTOR MEMORY STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18614180 titled 'SEMICONDUCTOR MEMORY STRUCTURE
The semiconductor memory device described in the abstract includes multiple metal lines connected to active regions using conductive vias.
- The first word line is formed over a first active region.
- A first metal line is perpendicular to the first word line and connected to it using a first conductive via.
- The second and third metal lines are parallel to the first metal line and connected to source/drain regions of the active region using second and third conductive vias.
Potential Applications: - This technology can be used in various semiconductor memory devices such as DRAM or flash memory. - It can also be applied in other integrated circuit designs requiring efficient connection of metal lines to active regions.
Problems Solved: - Provides a reliable and efficient way to connect metal lines to active regions in semiconductor memory devices. - Helps improve the performance and reliability of the memory device by ensuring proper electrical connections.
Benefits: - Enhanced functionality and performance of semiconductor memory devices. - Improved manufacturing process efficiency and reliability. - Cost-effective solution for connecting metal lines in integrated circuits.
Commercial Applications: Title: Advanced Semiconductor Memory Device Technology for Improved Performance This technology can be utilized in the production of high-performance memory devices for consumer electronics, data storage systems, and computing devices. The improved connectivity and reliability offered by this innovation can lead to faster and more efficient memory solutions in the market.
Questions about Semiconductor Memory Device Technology: 1. How does this technology compare to traditional methods of connecting metal lines in semiconductor memory devices? This technology offers a more efficient and reliable way to connect metal lines to active regions, improving overall performance and reliability.
2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing? Large-scale implementation of this technology may require adjustments in manufacturing processes and equipment to ensure consistent and accurate connections between metal lines and active regions.
Original Abstract Submitted
A semiconductor memory device includes a first word line formed over a first active region. In some embodiments, a first metal line is disposed over and perpendicular to the first word line, where the first metal line is electrically connected to the first word line using a first conductive via, and where the first conductive via is disposed over the first active region. In some examples, the semiconductor memory device further includes a second metal line and a third metal line both parallel to the first metal line and disposed on opposing sides of the first metal line, where the second metal line is electrically connected to a source/drain region of the first active region using a second conductive via, and where the third metal line is electrically connected to the source/drain region of the first active region using a third conductive via.
