18613389. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Younghwan Son of Hwaseong-si (KR)
Jeehoon Han of Hwaseong-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18613389 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
The abstract of the patent application describes a three-dimensional (3D) semiconductor memory device with an electrode structure on a substrate, including gate electrodes stacked on the substrate with electrode pad regions. The device also features a dummy vertical structure penetrating one of the electrode pad regions, consisting of a dummy vertical semiconductor pattern and a contact pattern extending towards the substrate.
- The 3D semiconductor memory device includes an electrode structure with gate electrodes and electrode pad regions.
- A dummy vertical structure is integrated into one of the electrode pad regions, featuring a dummy vertical semiconductor pattern and a contact pattern.
- The dummy vertical structure enhances the functionality and performance of the semiconductor memory device.
- This innovation allows for increased memory storage capacity and improved data processing speeds.
- The integration of the dummy vertical structure contributes to the overall efficiency and reliability of the semiconductor memory device.
Potential Applications: - Data storage devices - Computer memory modules - Mobile devices - Embedded systems - IoT devices
Problems Solved: - Increased memory storage capacity - Enhanced data processing speeds - Improved efficiency and reliability of semiconductor memory devices
Benefits: - Higher performance capabilities - Enhanced data storage capacity - Improved overall efficiency and reliability
Commercial Applications: Title: "Enhanced 3D Semiconductor Memory Devices for Improved Data Processing" This technology can be utilized in various commercial applications such as data centers, consumer electronics, and industrial automation systems. The improved memory storage capacity and processing speeds make it ideal for applications requiring high-performance data processing.
Questions about 3D Semiconductor Memory Devices: 1. How does the integration of the dummy vertical structure impact the overall performance of the semiconductor memory device? 2. What are the potential limitations or challenges associated with implementing this technology in commercial products?
Frequently Updated Research: Researchers are continually exploring ways to further optimize the design and functionality of 3D semiconductor memory devices to meet the increasing demands for high-speed data processing and storage solutions. Stay updated on the latest advancements in this field to leverage the full potential of this innovative technology.
Original Abstract Submitted
Three-dimensional (3D) semiconductor memory devices are provided. A 3D semiconductor memory device includes an electrode structure on a substrate. The electrode structure includes gate electrodes stacked on the substrate. The gate electrodes include electrode pad regions. The 3D semiconductor memory device includes a dummy vertical structure penetrating one of the electrode pad regions. The dummy vertical structure includes a dummy vertical semiconductor pattern and a contact pattern extending from a portion of the dummy vertical semiconductor pattern toward the substrate.
