18613324. MULTI-STACK SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
MULTI-STACK SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
MULTI-STACK SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18613324 titled 'MULTI-STACK SEMICONDUCTOR DEVICE
The abstract describes a multi-stack semiconductor device with various components arranged in different horizontal and vertical directions on a substrate.
- The device includes first channels, first gate lines, and first source/drain areas arranged in a specific layout.
- Additionally, there are second and third channels, gate lines, and source/drain areas arranged in a similar manner.
- A first lower source/drain contact connects to all the source/drain areas in the device.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - The technology addresses the need for more compact and efficient semiconductor devices. - It provides a solution for enhancing the functionality of electronic devices through improved semiconductor design.
Benefits: - Increased performance and efficiency of electronic devices. - Enhanced integration and miniaturization of semiconductor components. - Improved overall functionality and reliability of electronic systems.
Commercial Applications: - The technology can be applied in the production of smartphones, tablets, computers, and other consumer electronics. - It has potential uses in the automotive industry for advanced driver-assistance systems and in industrial automation for control systems.
Frequently Updated Research: - Ongoing research focuses on further optimizing the design and manufacturing processes of multi-stack semiconductor devices. - Studies are being conducted to explore new materials and technologies to enhance the performance of these devices.
Questions about Multi-Stack Semiconductor Devices: 1. How does the layout of the components in a multi-stack semiconductor device impact its overall performance? 2. What are the key challenges in scaling down the size of semiconductor components in multi-stack devices?
Original Abstract Submitted
A multi-stack semiconductor device includes a substrate, a device isolation layer, first channels, first gate lines covering the first channel, extending in a second horizontal direction, and spaced apart from each other in the first horizontal direction, first source/drain areas arranged on both sides of each of the first channels in the first horizontal direction, a second channel arranged apart from the first gate line in the vertical direction over any one of the first gate lines, a second gate line, second source/drain areas, a third channel arranged apart from the second gate line in the vertical direction over the second gate line, a third gate line, third source/drain areas, and a first lower source/drain contact extending in the vertical direction and connected to each of the first source/drain area, the second source/drain area, and the third source/drain area.
