18613222. SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)

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SEMICONDUCTOR DEVICE

Organization Name

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor(s)

Shunpei Yamazaki of Setagaya (JP)

Tomoaki Atsumi of Hadano (JP)

Yuta Endo of Atsugi (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18613222 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation:

This patent application describes a highly integrated semiconductor device that includes a memory cell string with multiple transistors connected in series, a prism-like insulator, and a substrate. The memory cell string is positioned on the side surface of the prism-like insulator, which is located over the substrate. The transistors in the memory cell string have gate insulators with a charge accumulation layer between a first and second insulator.

  • The semiconductor device is highly integrated and includes a memory cell string with multiple transistors connected in series.
  • A prism-like insulator is provided over the substrate, with the memory cell string positioned on its side surface.
  • The transistors in the memory cell string have gate insulators with a charge accumulation layer between a first and second insulator.

Potential Applications:

This technology could be applied in the development of advanced memory storage devices, high-performance computing systems, and other semiconductor applications requiring highly integrated components.

Problems Solved:

This innovation addresses the need for compact and efficient semiconductor devices with integrated memory cell strings, improving overall performance and functionality.

Benefits:

The benefits of this technology include increased integration, improved performance, and enhanced functionality in semiconductor devices, leading to advancements in various electronic applications.

Commercial Applications:

Potential commercial applications of this technology include the production of next-generation memory devices, high-speed computing systems, and advanced electronic devices for consumer and industrial use.

Questions about Semiconductor Device Innovation: 1. How does the integration of memory cell strings in this semiconductor device improve overall performance? 2. What are the potential implications of this technology in the semiconductor industry?

Frequently Updated Research:

Researchers are continually exploring ways to enhance the integration and efficiency of semiconductor devices, with a focus on improving memory storage capabilities and overall performance.


Original Abstract Submitted

A highly integrated semiconductor device is provided. The semiconductor device includes a substrate, a prism-like insulator, a memory cell string including a plurality of transistors connected in series. The prism-like insulator is provided over the substrate. The memory cell string is provided on the side surface of the prism-like insulator. The plurality of transistors each include a gate insulator and a gate electrode. The gate insulator includes a first insulator, a second insulator, and a charge accumulation layer. The charge accumulation layer is positioned between the first insulator and the second insulator.