18612553. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Hakuba Kitagawa of Yokkaichi (JP)
Mariko Sumiya of Yokkaichi (JP)
Kohei Nakamura of Yokkaichi (JP)
Masayuki Fukumoto of Yokkaichi (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18612553 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Simplified Explanation: The patent application describes a method for manufacturing semiconductor devices involving the formation of insulating and porous silicon layers on a substrate.
- An insulating film is first formed on the outer peripheral portion of a substrate.
- A silicon layer is then formed in contact with the surface inside the insulating film.
- The silicon layer is made porous using an anodization method, resulting in the formation of a porous silicon layer.
Key Features and Innovation:
- Formation of insulating film on the substrate.
- Creation of a silicon layer within the insulating film.
- Transformation of the silicon layer into a porous structure through an anodization process.
Potential Applications: The technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and solar cells.
Problems Solved: This method addresses the need for improved semiconductor device manufacturing processes that involve the formation of porous silicon layers.
Benefits:
- Enhanced performance of semiconductor devices.
- Increased efficiency in manufacturing processes.
- Potential cost savings in production.
Commercial Applications: The technology can be utilized in the production of advanced semiconductor devices for various industries, including electronics, telecommunications, and renewable energy.
Questions about Semiconductor Device Manufacturing: 1. How does the formation of a porous silicon layer impact the performance of semiconductor devices? 2. What are the potential challenges in scaling up this manufacturing method for mass production?
Frequently Updated Research: Ongoing research in semiconductor device manufacturing focuses on optimizing the properties of porous silicon layers for specific applications, as well as exploring new methods for enhancing device performance.
Original Abstract Submitted
A semiconductor device manufacturing method of embodiments includes: forming an insulating film on an outer peripheral portion of a surface of a first substrate; after forming the insulating film, forming a silicon layer in contact with the surface inside the insulating film; and forming a porous silicon layer by making the silicon layer inside the insulating film porous using an anodization method.
