18612110. MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

MEMORY DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Kohji Kanamori of Suwon-si (KR)

Seogoo Kang of Suwon-si (KR)

Kyungdong Kim of Suwon-si (KR)

Seunghyun Lee of Suwon-si (KR)

Jeehoon Han of Suwon-si (KR)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18612110 titled 'MEMORY DEVICE

The memory device described in the abstract includes a unique structure with first and second cell array stacks, each with gate electrodes, channel structures, and pad portions with a step shape.

• The first cell array stack features first gate electrodes and pad portions connected to them, while the second cell array stack has second gate electrodes and pad portions connected to them.
• The second pad portions overlap the first pad portions in a specific direction.
• A vertical contact passes through the pad portions and extension portions below them, extending in the same direction.
• This design allows for efficient memory storage and retrieval within the device.

Potential Applications: - This memory device can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in data storage systems, servers, and other computing equipment.

Problems Solved: - The memory device addresses the need for high-density and reliable memory storage solutions. - It offers improved performance and efficiency compared to traditional memory devices.

Benefits: - Enhanced memory capacity and speed. - Increased reliability and durability. - Cost-effective manufacturing process.

Commercial Applications: Title: Advanced Memory Device for High-Performance Computing This memory device can be utilized in the production of consumer electronics, data centers, and cloud computing facilities. Its high performance and reliability make it a valuable component in the tech industry.

Questions about the Memory Device: 1. How does the unique structure of the memory device contribute to its efficiency and performance? The step-shaped pad portions and vertical contacts allow for optimized data storage and retrieval processes, enhancing the device's overall functionality.

2. What sets this memory device apart from traditional memory solutions in terms of storage capacity and speed? The innovative design of the memory device enables higher memory density and faster data access, making it a superior choice for modern computing needs.

Original Abstract Submitted

A memory device is provided. The memory device includes a first cell array stack including first gate electrodes, a first channel structure, and first pad portions respectively connected to the first gate electrodes and having a step shape, a second cell array stack disposed on the first cell array stack and including second gate electrodes, a second channel structure, and second pad portions respectively connected to the second gate electrodes and having a step shape, wherein the second pad portions overlap the first pad portions in the first direction, and a vertical contact passing through any one of the first pad portions, first extension portions below the any one of the first pad portions, any one of the second pad portions, and second extension portions below the any one of the second pad portions, to extend in the first direction.