18612011. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18612011 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of memory cells with first and second vertical channel transistors (VCT) connected in series, along with ferroelectric capacitors arranged in a vertical direction.
- The memory cells are organized in columns and rows in different horizontal directions, providing efficient storage and retrieval of data.
- The ferroelectric capacitors connected to the second VCT in parallel enhance the memory cell's performance and reliability.
- The vertical arrangement of memory cells optimizes space utilization and increases storage capacity.
- The use of VCTs and ferroelectric capacitors improves the speed and efficiency of data read and write operations.
- This innovative design offers a more advanced and reliable semiconductor memory solution for various applications.
Potential Applications: This technology can be applied in various electronic devices such as smartphones, tablets, and computers to enhance memory performance and capacity.
Problems Solved: This technology addresses the need for efficient and reliable semiconductor memory solutions with increased storage capacity and improved data processing speeds.
Benefits: The benefits of this technology include enhanced memory performance, increased storage capacity, improved data processing speeds, and overall reliability in electronic devices.
Commercial Applications: This technology can be utilized in the consumer electronics industry to improve the performance and efficiency of memory storage in devices, leading to better user experiences and increased market competitiveness.
Questions about the technology: 1. How does the vertical arrangement of memory cells improve storage capacity and performance? 2. What specific advantages do ferroelectric capacitors offer in semiconductor memory devices?
Frequently Updated Research: Researchers are continually exploring new ways to enhance semiconductor memory devices, including advancements in materials and design to further improve performance and reliability.
Original Abstract Submitted
A semiconductor memory device includes a plurality of memory cells each including a first vertical channel transistor (VCT) and a second VCT arranged in a vertical direction and connected to each other in series, the plurality of memory cells respectively including a plurality of ferroelectric capacitors connected to the second VCT in parallel and arranged in the vertical direction, wherein the plurality of memory cells are arranged in columns and rows in a first horizontal direction and a second horizontal direction that is different from the first horizontal direction.
