18611936. SUBSTRATE PROCESSING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SUBSTRATE PROCESSING DEVICE
Organization Name
Inventor(s)
Byunghwan Kong of Suwon-si (KR)
SUBSTRATE PROCESSING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18611936 titled 'SUBSTRATE PROCESSING DEVICE
The substrate processing device described in the patent application consists of a first tube for loading a substrate, a second tube containing the first tube, and a process gas supply line for injecting process gas into the first tube.
- The first tube features multiple exhaust holes on its sidewall, including a main exhaust hole and a multi-exhaust hole region with several auxiliary exhaust holes of varying heights.
- The height of each auxiliary exhaust hole is less than the height of the main exhaust hole.
Potential Applications: - Semiconductor manufacturing processes - Thin film deposition - Solar panel production
Problems Solved: - Improved gas distribution within the substrate processing device - Enhanced control over exhaust gas flow - Increased efficiency in substrate processing
Benefits: - Higher quality substrate processing results - Reduced gas wastage - Enhanced process control and repeatability
Commercial Applications: Title: Advanced Substrate Processing Device for Semiconductor Manufacturing This technology could be used in semiconductor manufacturing facilities to improve process efficiency and product quality. It has the potential to revolutionize thin film deposition processes and enhance solar panel production.
Questions about the technology: 1. How does the design of the exhaust system in this substrate processing device improve gas distribution and control? 2. What specific advantages does the multi-exhaust hole region offer in terms of substrate processing efficiency and quality control?
Original Abstract Submitted
Provided is a substrate processing device including a first tube configured to load a substrate in an interior space thereof, a second tube configured to include the first tube therein, and a process gas supply line configured to inject process gas to the interior space of the first tube, wherein the first tube has a plurality of exhaust holes penetrating a sidewall of the first tube, the plurality of exhaust holes include a main exhaust hole and a multi-exhaust hole region disposed in a line in the vertical direction, the multi-exhaust hole region includes a plurality of auxiliary exhaust holes, and the height of each of the plurality of auxiliary exhaust holes is less than the height of the main exhaust hole.
