18611843. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SHAOFENG Ding of Suwon-si (KR)
JEONG HOON Ahn of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18611843 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a semiconductor substrate with a connection region, a pair of epitaxial patterns, a capacitor, a middle connection layer, an interconnection layer, and a through-via.
- The capacitor is positioned between the pair of epitaxial patterns and includes a metal electrode and a dielectric pattern.
- The through-via penetrates the connection region of the semiconductor substrate and is connected to the capacitor through the interconnection layer and the middle connection layer.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance integrated circuits.
Problems Solved: - This innovation addresses the need for improved connectivity and performance in semiconductor devices. - It provides a solution for enhancing the efficiency of capacitors in electronic circuits.
Benefits: - Improved connectivity and performance in semiconductor devices. - Enhanced efficiency of capacitors in electronic circuits.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Connectivity This technology could be utilized in the production of high-performance electronic devices for consumer electronics, telecommunications, and automotive industries.
Prior Art: Readers can explore prior patents related to semiconductor device manufacturing processes, capacitor technologies, and interconnection methods.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, capacitor design, and interconnection techniques to enhance the performance of electronic devices.
Questions about Semiconductor Device Technology: 1. How does this innovation impact the efficiency of electronic circuits? 2. What are the potential future developments in semiconductor device manufacturing using this technology?
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate including a connection region, a pair of epitaxial patterns provided at the semiconductor substrate, a capacitor disposed between the pair of epitaxial patterns, a middle connection layer on the capacitor, an interconnection layer on the middle connection layer, and a through-via provided under the interconnection layer and penetrating the connection region of the semiconductor substrate. The capacitor includes an upper portion of the semiconductor substrate between the pair of epitaxial patterns, a metal electrode on the upper portion of the semiconductor substrate, and a dielectric pattern disposed between the upper portion of the semiconductor substrate and the metal electrode. The through-via is connected to the capacitor through the interconnection layer and the middle connection layer.
