18611755. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)

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ETCHING METHOD AND PLASMA PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Yoshinari Hatazaki of Kurokawa-gun (JP)

ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18611755 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS

The etching method described in the patent application involves providing a substrate with two regions, one containing an opening and the other a recess below the opening. The second region includes a shoulder portion within the opening, with different materials from the first region.

  • The method includes forming a deposit on the shoulder portion using a first plasma containing carbon and oxygen.
  • Subsequently, the bottom portion of the recess is etched using a second plasma generated from a different process gas.

Key Features and Innovation:

  • Unique etching method involving two different plasma processes.
  • Utilization of a shoulder portion for deposit formation in the etching process.

Potential Applications:

  • Semiconductor manufacturing processes.
  • Microelectronics fabrication.
  • Nanotechnology applications.

Problems Solved:

  • Precise etching of complex structures.
  • Control over material removal in specific regions.

Benefits:

  • Enhanced precision in etching processes.
  • Improved control over material removal.
  • Potential for more intricate device fabrication.

Commercial Applications:

  • This technology could be valuable in the semiconductor industry for producing advanced microelectronics components with high precision.

Questions about the technology: 1. How does the use of two different plasma processes enhance the etching method? 2. What are the specific advantages of deposit formation on the shoulder portion in the etching process?


Original Abstract Submitted

An etching method comprising (a) providing a substrate including a first region having an opening and a second region located below the first region, the second region including a recess communicating with the opening, when viewed from a direction perpendicular to a main surface of the substrate, the second region including a shoulder portion located in the opening, the shoulder portion including an upper end of a side wall of the recess, the second region containing silicon and a material different from a material contained in the first region, (b) forming a deposit on the shoulder portion with first plasma generated from a first process gas containing a gas containing carbon and oxygen, and (c) etching a bottom portion of the recess with second plasma generated from a second process gas different from the first process gas.

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