18609539. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
WOOYEOL Maeng of SUWON-SI (KR)
CHANGKI Baek of POHANG-SI (KR)
KANGWOOK Park of SUWON-SI (KR)
HYANGWOO Kim of POHANG-SI (KR)
KYOUNGHWAN Oh of POHANG-SI (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18609539 titled 'INTEGRATED CIRCUIT DEVICE
The abstract of the patent application describes an integrated circuit device with a unique structure involving a fin body, source, drain, channel, drain extension region, gate insulating film, high-permittivity layer, and a double gate.
- The device includes a fin body with a source and drain, a channel, and a drain extension region.
- A gate insulating film is placed on the channel and drain extension region.
- A high-permittivity layer is positioned on the gate insulating film over the drain extension region.
- The device features a double gate with a first gate above the channel and a second gate in contact with the first gate.
- The first gate has a higher work function than the second gate.
Potential Applications: - This technology can be used in advanced semiconductor devices for improved performance. - It can enhance the efficiency and speed of electronic circuits in various applications.
Problems Solved: - The device addresses the need for better control and optimization of electronic components in integrated circuits. - It offers a solution for enhancing the functionality of semiconductor devices.
Benefits: - Improved performance and efficiency in electronic circuits. - Enhanced control and optimization of semiconductor devices. - Potential for increased speed and reliability in integrated circuits.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be applied in the development of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be utilized in industrial applications where efficient and reliable electronic components are essential.
Questions about the technology: 1. How does the unique structure of the integrated circuit device contribute to its performance? - The unique structure of the device, including the double gate design and high-permittivity layer, allows for better control and optimization of electronic components, leading to improved performance.
2. What are the potential implications of using a double gate in semiconductor devices? - The use of a double gate in semiconductor devices can enhance the efficiency and speed of electronic circuits, making them more reliable and suitable for various applications.
Original Abstract Submitted
An integrated circuit device includes a fin body, a source and a drain disposed on the fin body, a channel disposed in the fin body between the source and the drain, a drain extension region disposed in the fin body between the drain and the channel, a gate insulating film disposed on the channel and the drain extension region, a high-permittivity layer disposed on the gate insulating film over the drain extension region, and a double gate including a first gate disposed on the gate insulating film above the channel adjacent to the source and a second gate in contact with the first gate. A first work function of the first gate is greater than a second work function of the second gate.
