18609186. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
Jongryeol Yoo of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18609186 titled 'INTEGRATED CIRCUIT DEVICES
The abstract describes an integrated circuit device with a fin-type active region protruding from a substrate, semiconductor patterns on the fin-type active region, a gate line surrounding the semiconductor patterns, and a source/drain region adjacent to the gate line.
- The device features a fin-type active region that extends in one direction and semiconductor patterns separated vertically.
- A gate line surrounds the semiconductor patterns and extends in a direction intersecting the fin-type active region.
- The source/drain region includes a semiconductor layer with a material containing elements like fluorine, oxygen, argon, or nitrogen.
- An inner spacer between the source/drain region and the gate line contains oxide or nitride with the same elements.
Potential Applications: - This technology can be used in the manufacturing of advanced integrated circuits for various electronic devices. - It can improve the performance and efficiency of semiconductor devices.
Problems Solved: - Enhances the functionality and integration of semiconductor components. - Increases the speed and reliability of electronic devices.
Benefits: - Improved performance and efficiency of integrated circuits. - Enhanced functionality and integration of semiconductor devices.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Performance This technology can be applied in the production of high-performance electronic devices such as smartphones, tablets, and computers. It can also benefit industries like telecommunications, automotive, and aerospace.
Questions about the technology: 1. How does the inclusion of elements like fluorine, oxygen, argon, or nitrogen in the semiconductor layer impact the performance of the integrated circuit device? 2. What are the specific advantages of using an inner spacer with oxide or nitride in the source/drain region of the device?
Original Abstract Submitted
An integrated circuit device may include a fin-type active region that protrudes from a substrate and extends in a first direction, a plurality of semiconductor patterns on the fin-type active region and separated from each other in a vertical direction, a gate line on the fin-type active region, the gate line surrounding the semiconductor patterns and extending in a second direction that intersects the first direction, a source/drain region on the fin-type active region, adjacent to the gate line and connected to the semiconductor patterns, wherein the source/drain region includes a first semiconductor layer contacting the semiconductor patterns and including a semiconductor material including a first element including at least one selected from the group consisting of fluorine, oxygen, argon, and nitrogen, and an inner spacer between the source/drain region and the gate line and including an oxide including the first element or a nitride including the first element.
