18608383. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hyo Joon Ryu of Hwaseong-si (KR)
Young Hwan Son of Hwaseong-si (KR)
Jung Hoon Jun of Hwaseong-si (KR)
Kohji Kanamori of Seongnam-si (KR)
Jee Hoon Han of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18608383 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor memory described in the patent application consists of metallic lines on a substrate, with an uppermost metallic line, a semiconductor conduction line, and a vertical structure that penetrates the semiconductor conduction line and metallic lines.
Key Features and Innovation:
- The memory includes a vertical structure with an upper channel film, a first lower channel film, and an upper connection channel film.
- A first cutting line is present through the metallic lines and the semiconductor conduction line.
- The memory features a first upper cutting line through the semiconductor conduction line and a first lower cutting line through the metallic lines.
- The width of the first upper cutting line is greater than the width of an extension line of a sidewall of the first lower cutting line.
Potential Applications:
- This technology can be used in various semiconductor memory devices.
- It can enhance the performance and efficiency of memory systems in electronic devices.
Problems Solved:
- This innovation addresses the need for improved memory structures with enhanced functionality.
- It solves challenges related to data storage and retrieval in semiconductor memory devices.
Benefits:
- Increased data processing speed and efficiency.
- Enhanced reliability and durability of semiconductor memory systems.
Commercial Applications:
- This technology has potential applications in the semiconductor industry for developing advanced memory devices.
- It can be utilized in consumer electronics, data storage systems, and other electronic devices requiring efficient memory solutions.
Questions about the technology: 1. How does the vertical structure in this semiconductor memory improve its performance? 2. What specific advantages does the first cutting line configuration offer in terms of memory functionality and design efficiency?
Original Abstract Submitted
A semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating the semiconductor conduction line and metallic lines, and including a vertical structure that includes an upper channel film, a first lower channel film, and an upper connection channel film connecting the upper channel film and the first lower channel film between a bottom of the semiconductor conduction line and a bottom of the uppermost metallic line, and a first cutting line through the metallic lines and the semiconductor conduction line, and including a first upper cutting line through the semiconductor conduction line, and a first lower cutting line through the plurality of metallic lines, a width of the first upper cutting line being greater than a width of an extension line of a sidewall of the first lower cutting line.
