18605986. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Takafumi Masuda of Kawasaki Kanagawa (JP)
Mutsumi Okajima of Yokkaichi Mie (JP)
Nobuyoshi Saito of Ota Tokyo (JP)
Keiji Ikeda of Kawasaki Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18605986 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of memory layers arranged in a first direction and via-wiring extending in the same direction. Each memory layer includes a semiconductor layer connected to the via-wiring, a gate electrode facing the semiconductor layer, a memory portion, and wiring. A connection wiring links the gate electrode and the wiring, with a first part running along the gate electrode and a second part continuing along the wiring.
- Memory layers arranged in a first direction
- Via-wiring extending in the first direction
- Semiconductor layer connected to via-wiring
- Gate electrode facing semiconductor layer
- Memory portion and wiring on opposite sides of the semiconductor layer
- Connection wiring linking gate electrode and wiring
- First part of connection wiring along gate electrode
- Second part of connection wiring along wiring
Potential Applications: - High-speed data storage devices - Advanced computing systems - Semiconductor manufacturing industry
Problems Solved: - Enhanced memory storage capabilities - Improved data processing speeds - Increased efficiency in semiconductor devices
Benefits: - Faster data access and retrieval - Higher storage capacity - Enhanced overall performance of electronic devices
Commercial Applications: Title: "Next-Generation Semiconductor Memory Devices for Improved Data Processing" This technology can be utilized in various commercial applications such as: - Consumer electronics - Data centers - Telecommunications industry
Questions about the technology: 1. How does the connection wiring improve the performance of the memory device?
The connection wiring ensures efficient communication between different components of the memory device, leading to enhanced data processing speeds.
2. What sets this semiconductor memory device apart from traditional memory devices?
This device offers higher storage capacity and faster data access, making it ideal for advanced computing systems and data-intensive applications.
Original Abstract Submitted
A semiconductor memory device includes memory layers arranged in a first direction and a via-wiring extending in the first direction. The plurality of memory layers each include a semiconductor layer electrically connected to the via-wiring, a gate electrode opposed to surfaces of the semiconductor layer in the first direction, a memory portion disposed on one side in a second direction with respect to the semiconductor layer, a wiring disposed on the other side in the second direction with respect to the semiconductor layer, and a connection wiring connected to the gate electrode and the wiring. The connection wiring includes a first part extending in the second direction along a side surface of the gate electrode in the third direction and a second part continuous with the first part, extending in the third direction along a side surface of the wiring in the second direction.
