18605526. NORMAL-INCIDENCE IN-SITU PROCESS MONITOR SENSOR simplified abstract (Tokyo Electron Limited)
Contents
NORMAL-INCIDENCE IN-SITU PROCESS MONITOR SENSOR
Organization Name
Inventor(s)
Scott Lefevre of Albany NY (US)
NORMAL-INCIDENCE IN-SITU PROCESS MONITOR SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18605526 titled 'NORMAL-INCIDENCE IN-SITU PROCESS MONITOR SENSOR
The patent application describes an apparatus for in-situ etching monitoring in a plasma processing chamber.
- Continuous wave broadband light source used for illumination.
- Incident light beam directed at normal incidence to the substrate.
- Collection system collects reflected light beam and directs it to a light detector.
- Controller determines substrate properties based on reference and reflected light beams.
- Etch process control based on determined properties.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production
Problems Solved: - Real-time monitoring of etching process - Enhanced control over substrate properties
Benefits: - Improved process efficiency - Higher quality end products - Reduced material wastage
Commercial Applications: Title: "Advanced In-Situ Etching Monitoring System for Semiconductor Manufacturing" This technology can be used in semiconductor fabrication facilities to optimize etching processes and improve overall production efficiency.
Questions about the technology: 1. How does the apparatus improve the quality of end products in semiconductor manufacturing? - The apparatus allows for real-time monitoring and control of the etching process, leading to higher quality substrates and structures. 2. What are the potential cost savings associated with using this monitoring system in thin film deposition processes? - By optimizing the etching process, manufacturers can reduce material wastage and improve overall efficiency, leading to cost savings.
Original Abstract Submitted
An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.
