18605203. DEVICE FOR CONTROLLING TRAPPED IONS simplified abstract (Infineon Technologies Austria AG)

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DEVICE FOR CONTROLLING TRAPPED IONS

Organization Name

Infineon Technologies Austria AG

Inventor(s)

Silke Katharina Auchter of Villach (AT)

Alexander Zesar of Villach (AT)

[[:Category:Clemens R�ssler of Villach (AT)|Clemens R�ssler of Villach (AT)]][[Category:Clemens R�ssler of Villach (AT)]]

Helmut Heinrich Schoenherr of Villach (AT)

DEVICE FOR CONTROLLING TRAPPED IONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18605203 titled 'DEVICE FOR CONTROLLING TRAPPED IONS

Simplified Explanation: The patent application describes a device for controlling trapped ions, consisting of a substrate with a metal layer, an electrode for trapping ions, and an electrical insulator between the metal layer and the electrode.

  • The device includes a substrate with a metal layer.
  • An electrode is placed over the metal layer to trap ions in a space above it.
  • An electrical insulator is positioned between the metal layer and the electrode.
  • The insulator has varying etching rates from the upper surface facing the electrode to the lower surface facing the metal layer.

Key Features and Innovation:

  • Device for controlling trapped ions with improved efficiency.
  • Metal layer enhances ion trapping capabilities.
  • Electrical insulator prevents interference between the metal layer and the electrode.
  • Varying etching rates of the insulator optimize ion trapping performance.

Potential Applications:

  • Quantum computing.
  • Ion-based sensors.
  • Precision measurement devices.

Problems Solved:

  • Interference between metal layer and electrode.
  • Inefficient ion trapping.
  • Lack of control over trapped ions.

Benefits:

  • Enhanced ion trapping efficiency.
  • Improved precision in measurements.
  • Increased reliability in ion-based applications.

Commercial Applications: Title: Advanced Ion Control Device for Quantum Computing and Precision Measurement This technology can be utilized in:

  • Research laboratories.
  • High-tech manufacturing facilities.
  • Aerospace industry for navigation systems.

Prior Art: Prior research on ion trapping techniques in quantum computing and precision measurement devices can be found in academic journals and patents related to ion control devices.

Frequently Updated Research: Stay updated on the latest advancements in ion trapping technology for quantum computing and precision measurement applications through scientific journals and conferences.

Questions about Ion Control Devices: 1. What are the potential challenges in scaling up this technology for industrial applications? 2. How does the varying etching rate of the electrical insulator impact the overall performance of the device?


Original Abstract Submitted

A device for controlling trapped ions includes a substrate. A metal layer is disposed over the substrate. An electrode of an ion trap is disposed over the metal layer, the electrode being configured to trap one or more ions in a space above the electrode. An electrical insulator is disposed between the metal layer and the electrode. The electrical insulator has an upper surface facing towards the electrode and a lower surface facing towards the metal layer. An etching rate of the electrical insulator increases along a direction pointing from the upper surface to the lower surface.

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