18604844. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18604844 titled 'INTEGRATED CIRCUIT DEVICES
Simplified Explanation: The patent application describes an integrated circuit device with a unique stack structure and channel structure, including gate electrodes at different heights and interlayer insulating layers of varying thicknesses.
Key Features and Innovation:
- Integrated circuit device with a stack structure and channel structure
- Gate electrodes at different heights - first upper gate electrode and second upper gate electrode
- Interlayer insulating layers of different thicknesses
- Specific positioning of gate electrodes and interlayer insulating layers in relation to the substrate
Potential Applications: This technology can be applied in the semiconductor industry for the development of advanced integrated circuit devices with improved performance and efficiency.
Problems Solved:
- Enhancing the functionality and performance of integrated circuit devices
- Optimizing the stack structure and channel structure for better integration and operation
Benefits:
- Improved performance and efficiency of integrated circuit devices
- Enhanced functionality and reliability in semiconductor applications
Commercial Applications: This technology has potential commercial applications in the semiconductor industry for the production of high-performance integrated circuit devices, leading to advancements in electronics and technology markets.
Prior Art: Readers can explore prior art related to integrated circuit devices, stack structures, and channel structures in the semiconductor industry to understand the evolution of this technology.
Frequently Updated Research: Stay updated on the latest research and developments in integrated circuit devices, stack structures, and channel structures to keep abreast of advancements in the semiconductor industry.
Questions about Integrated Circuit Devices: 1. What are the key components of an integrated circuit device? 2. How do different structures within an integrated circuit device contribute to its overall performance and functionality?
Original Abstract Submitted
An integrated circuit device comprising: a substrate; a stack structure comprising interlayer insulating layers and gate electrodes; and a channel structure in the stack structure, wherein the gate electrodes comprise a first upper gate electrode at a highest position and a second upper gate electrode at a second-highest position, the interlayer insulating layers comprises a first interlayer insulating layer between the first upper gate electrode and the second upper gate electrode with a first thickness, a second interlayer insulating layer that has a second thickness, a lower surface of the first upper gate electrode is at a farther distance than or at an equal distance to a lower surface of the pad structure from the substrate, and an upper surface of the second upper gate electrode is at a closer distance than or at an equal distance to the lower surface of the pad structure from the substrate.
