18604752. DISPLAY DEVICE AND SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
DISPLAY DEVICE AND SEMICONDUCTOR DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
DISPLAY DEVICE AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18604752 titled 'DISPLAY DEVICE AND SEMICONDUCTOR DEVICE
The patent application describes a display device with a high aperture ratio or a semiconductor device with a large element area.
- Channel formation region of a TFT with a multi-gate structure is provided under wiring between adjacent pixel electrodes.
- Channel width direction of each channel formation region is parallel to the longitudinal direction of the pixel electrode.
- Increasing the area of the channel formation region by having a longer channel width than channel length.
Potential Applications: - High-resolution displays - Semiconductor devices with improved performance
Problems Solved: - Low aperture ratio in display devices - Limited area for elements in semiconductor devices
Benefits: - Enhanced display quality - Improved semiconductor device efficiency
Commercial Applications: Title: High-Aperture Ratio Displays and Semiconductor Devices This technology can be used in high-end TVs, smartphones, tablets, and other electronic devices requiring high-resolution displays and efficient semiconductor components.
Questions about the technology: 1. How does the multi-gate structure improve the performance of the TFT?
The multi-gate structure allows for better control of the channel formation region, leading to enhanced device efficiency.
2. What are the specific advantages of having a channel width longer than the channel length in this technology?
By increasing the area of the channel formation region, the device can achieve higher performance and functionality.
Original Abstract Submitted
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
