18604217. APPARATUS INCLUDING STANDARD CELL simplified abstract (Micron Technology, Inc.)
Contents
APPARATUS INCLUDING STANDARD CELL
Organization Name
Inventor(s)
APPARATUS INCLUDING STANDARD CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18604217 titled 'APPARATUS INCLUDING STANDARD CELL
The patent application describes an apparatus with a semiconductor substrate containing different regions and multiple wiring layers above them.
- The first region has transistors of a first conductivity type, while the second region has transistors of a second conductivity type.
- The wiring layers include lower, middle, and upper layers, with wiring connections elongating through the regions to connect transistors.
- Wires in the middle layer extend in one direction to connect sources and drains of transistors, while wires in the lower layer extend in a perpendicular direction to connect the middle layer wires.
Potential Applications: This technology can be used in the semiconductor industry for advanced integrated circuits and microprocessors.
Problems Solved: This innovation addresses the need for efficient wiring connections in complex semiconductor devices.
Benefits: The technology allows for compact and reliable wiring configurations in semiconductor substrates, improving overall performance.
Commercial Applications: This technology can be applied in the development of high-performance electronic devices, leading to advancements in computing and telecommunications industries.
Questions about the Technology: 1. How does this technology improve the efficiency of wiring connections in semiconductor devices? 2. What are the potential implications of this innovation in the semiconductor industry?
Frequently Updated Research: Researchers are constantly exploring new ways to enhance the design and performance of semiconductor devices using advanced wiring configurations.
Original Abstract Submitted
According to one or more embodiments of the disclosure, an apparatus comprises: a semiconductor substrate including a first region, a second region, and a third region between the first region and the second region; and a plurality of wiring layers, at least in part, above the third region. The first region includes first transistors of first conductivity-type. The second region includes second transistors of second conductivity-type. The wiring layers include a lower wiring layer, a middle wiring layer, and an upper wiring layer. One or more wirings in the middle wiring layer elongate through the third region in a first direction to connect ones of sources and drains of the first transistors and corresponding ones of sources and drains of the second transistors. One or more wirings in the lower wiring layer elongate in the third region in a second direction perpendicular to the first direction to connect ones of the wirings of the middle wiring layer and corresponding ones of the wirings of the middle wiring layer.
