18603483. SEMICONDUCTOR DEVICE STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE STRUCTURES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Hsin-Che Chiang of Taipei City (TW)

Jeng-Ya David Yeh of New Taipei City (TW)

Chung-Sheng Liang of Changhua County (TW)

Ju-Li Huang of Nantou County (TW)

SEMICONDUCTOR DEVICE STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18603483 titled 'SEMICONDUCTOR DEVICE STRUCTURES

The method described in the patent application involves a process for semiconductor manufacturing that includes the formation of silicon nitride features on the sidewall surfaces of a contact hole above a source/drain feature, followed by the creation of air gaps through selective etching.

• Formation of first and second silicon nitride features on sidewall surfaces of a contact hole
• Creation of air gaps by removing the silicon nitride features via selective etching
• Formation of a contact plug in the contact hole, electrically coupled to the source/drain feature
• Removal of a top portion of the contact plug to create a recess in the contact hole
• Formation of a hard mask layer in the recess

Potential Applications: - Semiconductor manufacturing processes - Integrated circuit fabrication - Nanotechnology research and development

Problems Solved: - Improving the performance and efficiency of semiconductor devices - Enhancing the reliability of electrical connections in integrated circuits

Benefits: - Increased functionality and performance of semiconductor devices - Enhanced electrical connectivity and signal transmission - Improved manufacturing processes for semiconductor components

Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Enhanced Device Performance This technology could be applied in the production of various electronic devices such as smartphones, computers, and other consumer electronics. It could also be utilized in the automotive industry for the development of advanced driver assistance systems and electric vehicles.

Questions about the technology: 1. How does the formation of air gaps through selective etching improve the performance of semiconductor devices? 2. What are the potential cost savings associated with implementing this semiconductor manufacturing method?

Original Abstract Submitted

In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.