18603313. RRAM STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

RRAM STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Hai-Dang Trinh of Hsinchu (TW)

Chii-Ming Wu of Taipei City (TW)

Hsing-Lien Lin of Hsin-Chu (TW)

Fa-Shen Jiang of Taoyuan City (TW)

RRAM STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18603313 titled 'RRAM STRUCTURE

The present disclosure pertains to an integrated chip with a unique structure to prevent the diffusion of noble metal atoms.

• Integrated chip with bottom electrode structure over a lower interconnect within a lower inter-level dielectric layer.
• Bottom electrode structure includes a noble metal on its upper surface.
• Diffusion barrier layer placed over the bottom electrode structure to prevent noble metal atoms from diffusing to the data storage structure.
• Data storage structure and top electrode structure are positioned over the diffusion barrier layer.

Potential Applications: - Memory devices - Semiconductor industry - Electronics manufacturing

Problems Solved: - Prevents diffusion of noble metal atoms in integrated chips - Enhances the performance and reliability of memory devices

Benefits: - Improved longevity of integrated chips - Enhanced data storage capabilities - Increased efficiency in semiconductor devices

Commercial Applications: Title: Innovative Integrated Chip Technology for Enhanced Memory Devices This technology can be utilized in the production of memory devices, semiconductor components, and other electronic devices to improve their performance and reliability. The market implications include increased demand for advanced memory solutions and enhanced semiconductor products.

Questions about Integrated Chip Technology: 1. How does the diffusion barrier layer prevent the diffusion of noble metal atoms in the integrated chip? The diffusion barrier layer acts as a protective barrier between the bottom electrode structure and the data storage structure, preventing the noble metal atoms from migrating and affecting the performance of the chip.

2. What are the potential commercial applications of this integrated chip technology? This technology can be applied in memory devices, semiconductor components, and various electronic devices to enhance their functionality and reliability, catering to the growing demand for advanced memory solutions in the market.

Original Abstract Submitted

In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode structure disposed over a lower interconnect within a lower inter-level dielectric (ILD) layer over a substrate. The bottom electrode structure has an upper surface including a noble metal. A diffusion barrier layer is over the bottom electrode structure, a data storage structure is over the diffusion barrier layer, and a top electrode structure is over the data storage structure. The diffusion barrier layer is configured to mitigate a diffusion of noble metal atoms from the bottom electrode structure to the data storage structure.