18602392. INTERCONNECT STRUCTURE AND FORMING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

INTERCONNECT STRUCTURE AND FORMING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jian-Hong Lin of Yunlin County (TW)

Kuo-Yen Liu of Hsinchu County (TW)

Hsin-Chun Chang of Taipei City (TW)

Tzu-Li Lee of Yunlin County (TW)

Yu-Ching Lee of Kaohsiung City (TW)

Yih-Ching Wang of Hsinchu (TW)

INTERCONNECT STRUCTURE AND FORMING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18602392 titled 'INTERCONNECT STRUCTURE AND FORMING METHOD THEREOF

The abstract describes an interconnect structure consisting of a first dielectric layer, a first metal layer with two segments, a metal via connecting the segments, and a second metal layer.

• The first dielectric layer is on top of a substrate.
• The first metal layer is divided into a first segment and a second segment, with a metal via connecting them.
• The metal via has two portions, one between the segments of the first metal layer and one above it.
• The second metal layer sits on top of the metal via and includes a metal line spanning the first and second segments of the first metal layer.
• The metal via has sidewalls that are offset from each other.

Potential Applications: - Integrated circuits - Semiconductor devices - Electronics manufacturing

Problems Solved: - Improved interconnectivity in electronic devices - Enhanced signal transmission efficiency - Reduced signal interference

Benefits: - Higher performance in electronic devices - Increased reliability - Enhanced signal integrity

Commercial Applications: Title: Advanced Interconnect Structures for High-Performance Electronics This technology can be used in: - Consumer electronics - Telecommunications equipment - Automotive electronics

Prior Art: Readers can explore prior patents related to interconnect structures in semiconductor devices to understand the evolution of this technology.

Frequently Updated Research: Researchers are continually exploring new materials and designs to further improve interconnect structures for future electronic devices.

Questions about Interconnect Structures: 1. How do advanced interconnect structures impact the overall performance of electronic devices?

  - Advanced interconnect structures can significantly improve signal transmission efficiency and overall device performance by reducing signal interference and enhancing signal integrity.

2. What are the key challenges in developing innovative interconnect structures for next-generation electronics?

  - The development of innovative interconnect structures faces challenges such as material compatibility, manufacturing complexity, and scalability to meet the demands of future electronic devices.

Original Abstract Submitted

An interconnect structure includes a first dielectric layer, a first metal layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer and has a first segment and a second segment separated from the first segment. The metal via includes a first portion between the first and second segments of the first metal layer, and a second portion above the first metal layer. The second metal layer is over the metal via. From a top view, the second metal layer includes a metal line extending across the first and second segments of the first metal layer. From a cross-sectional view, the first portion of the metal via has opposite sidewalls respectively offset from opposite sidewalls of the second portion of the metal via.