18602067. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
MEMORY DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chao-I Wu of Hsinchu County (TW)
Yu-Ming Lin of Hsinchu City (TW)
Sai-Hooi Yeong of Hsinchu County (TW)
Han-Jong Chia of Hsinchu City (TW)
MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18602067 titled 'MEMORY DEVICE AND METHOD OF FORMING THE SAME
The memory device described in the patent application includes a first tier on a substrate and a second tier on top of the first tier. The first tier consists of a first layer stack, a first gate electrode, a first channel layer, and a first ferroelectric layer. The second tier comprises a second layer stack, a second gate electrode, a second channel layer, and a second ferroelectric layer.
- First tier with first layer stack, first gate electrode, first channel layer, and first ferroelectric layer.
- Second tier with second layer stack, second gate electrode, second channel layer, and second ferroelectric layer.
Potential Applications: - Non-volatile memory devices - High-density storage solutions - Advanced computing systems
Problems Solved: - Enhanced data retention - Improved memory device performance - Increased storage capacity
Benefits: - Faster data access - Lower power consumption - Reliable data storage
Commercial Applications: Title: Next-Generation Non-Volatile Memory Devices This technology could revolutionize the data storage industry by offering high-performance, reliable memory solutions for various applications such as consumer electronics, data centers, and IoT devices.
Questions about Memory Device Technology: 1. How does this memory device technology compare to existing non-volatile memory solutions? This memory device technology offers improved data retention and performance compared to traditional memory devices, making it a promising advancement in the field of data storage.
2. What are the potential challenges in implementing this memory device technology on a large scale? Implementing this memory device technology on a large scale may require significant investment in manufacturing processes and infrastructure to meet the demand for high-density storage solutions.
Original Abstract Submitted
Provided are a memory device and a method of forming the same. The memory device includes a first tier on a substrate and a second tier on the first tier. The first tier includes a first layer stack; a first gate electrode penetrating through the first layer stack; a first channel layer between the first layer stack and the first gate electrode; and a first ferroelectric layer between the first channel layer and the first gate electrode. The second tier includes a second layer stack; a second gate electrode penetrating through the second layer stack; a second channel layer between the second layer stack and the second gate electrode; and a second ferroelectric layer between the second channel layer and the second gate electrode.
