18602041. METHOD FOR FABRICATING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
METHOD FOR FABRICATING MEMORY DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Han-Jong Chia of Hsinchu City (TW)
Yu-Ming Lin of Hsinchu City (TW)
METHOD FOR FABRICATING MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18602041 titled 'METHOD FOR FABRICATING MEMORY DEVICE
The abstract describes a memory device with memory cells embedded in and penetrating through a word line, connected to source lines and bit lines.
- Memory cells embedded in and penetrating through a word line
- Source lines and bit lines electrically connected to the memory cells
- Method for fabricating the memory device is provided
Potential Applications: - This technology can be used in various electronic devices such as computers, smartphones, and tablets. - It can also be applied in data storage systems and embedded systems.
Problems Solved: - Provides a more efficient and compact memory device design. - Enhances the performance and reliability of memory storage in electronic devices.
Benefits: - Improved memory device functionality. - Increased data storage capacity. - Enhanced overall performance of electronic devices.
Commercial Applications: Title: "Innovative Memory Device Technology for Enhanced Data Storage" This technology can be utilized in the production of next-generation electronic devices, leading to improved performance and increased market competitiveness.
Questions about Memory Device Technology: 1. How does the memory device design impact the overall performance of electronic devices? - The memory device design directly affects the speed and efficiency of data storage and retrieval in electronic devices, leading to enhanced performance.
2. What are the potential cost implications of implementing this memory device technology in electronic devices? - The cost implications may vary depending on the scale of production and the specific requirements of the electronic devices, but overall, the technology offers improved performance and efficiency, which can offset initial costs.
Original Abstract Submitted
A memory device including a word line, memory cells, source lines and bit lines is provided. The memory cells are embedded in and penetrate through the word line. The source lines and the bit lines are electrically connected the memory cells. A method for fabricating a memory device is also provided.
