18601994. METHODS OF WRITING AND FORMING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

METHODS OF WRITING AND FORMING MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chien-Min Lee of Hsinchu County (TW)

Ming-Yuan Song of Hsinchu City (TW)

Yen-Lin Huang of Menlo Park CA (US)

Shy-Jay Lin of Hsinchu County (TW)

Tung-Ying Lee of Hsinchu City (TW)

Xinyu Bao of Fremont CA (US)

METHODS OF WRITING AND FORMING MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18601994 titled 'METHODS OF WRITING AND FORMING MEMORY DEVICE

The memory device described in the patent application includes a selector, a magnetic tunnel junction (MTJ) structure, a spin orbit torque (SOT) layer, a transistor, a word line, a bit line, first and second source lines, all interconnected to control write and read signals.

• Selector, MTJ structure, and SOT layer are key components of the memory device.
• Transistor controls the flow of signals between the bit line and source lines.
• Word line is electrically coupled to the gate of the transistor.
• SOT layer is electrically coupled to the bit line.
• First source line is electrically coupled to the source of the transistor.
• Second source line is electrically coupled to the selector.

Potential Applications: - This technology can be used in various memory storage applications. - It can be integrated into electronic devices for data storage and retrieval.

Problems Solved: - Provides a reliable and efficient memory storage solution. - Enables controlled flow of write and read signals in the memory device.

Benefits: - Improved data storage capabilities. - Enhanced performance and reliability of memory devices.

Commercial Applications: - Potential commercial uses include consumer electronics, data centers, and IoT devices. - Market implications include increased demand for advanced memory technologies.

Prior Art: - Researchers can explore prior art related to magnetic tunnel junction structures and spin orbit torque layers in memory devices.

Frequently Updated Research: - Stay updated on advancements in memory device technology, particularly in the field of magnetic tunnel junctions and spin orbit torque layers.

Questions about the technology: 1. How does the SOT layer contribute to the functionality of the memory device? 2. What are the potential implications of integrating this technology into consumer electronics?

Original Abstract Submitted

Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.