18601706. MEMORY DEVICE HAVING A NEGATIVE VOLTAGE CIRCUIT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
MEMORY DEVICE HAVING A NEGATIVE VOLTAGE CIRCUIT
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hidehiro Fujiwara of Hsinchu (TW)
Chih-Yu Lin of Taichung City (TW)
Yen-Huei Chen of Jhudong Township (TW)
MEMORY DEVICE HAVING A NEGATIVE VOLTAGE CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18601706 titled 'MEMORY DEVICE HAVING A NEGATIVE VOLTAGE CIRCUIT
Simplified Explanation: The patent application describes a memory device with a negative voltage generator that can provide different write paths for a bit line connected to a memory cell.
Key Features and Innovation:
- Memory device with a memory cell and a bit line.
- Negative voltage generator for providing different write paths.
- Control circuit for managing the write paths based on the status of the negative voltage generator.
Potential Applications: This technology could be used in various memory storage devices, such as solid-state drives, to improve write operations and data retention.
Problems Solved: This technology addresses the need for efficient and reliable write operations in memory devices, enhancing overall performance and longevity.
Benefits:
- Improved write path management.
- Enhanced data retention.
- Increased performance and reliability of memory devices.
Commercial Applications: Potential commercial applications include the manufacturing of high-performance solid-state drives for consumer electronics and data centers, where fast and reliable data storage is crucial.
Prior Art: Readers can explore prior art related to memory device technologies, negative voltage generators, and write path management in memory systems to understand the evolution of this innovation.
Frequently Updated Research: Researchers may find updated studies on memory device technologies, write path optimization, and negative voltage generator advancements relevant to this patent application.
Questions about Memory Device Technology: 1. What are the key components of a memory device? 2. How does the negative voltage generator impact write operations in memory devices?
Original Abstract Submitted
A memory device and a method for operating the memory device are provided. The memory device includes a memory cell and a bit line connected to the memory cell. A negative voltage generator is connected to the bit line. The negative voltage generator, when enabled, is operative to provide a first write path for the bit line. A control circuit is connected to the negative voltage generator and the bit line. The control circuit is operative to provide a second write path for the bit line when the negative voltage generator is not enabled.
