18601456. VARIABLE VOLTAGE BIT LINE PRECHARGE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 VARIABLE VOLTAGE BIT LINE PRECHARGE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VARIABLE VOLTAGE BIT LINE PRECHARGE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Memory Device Technology
- 1.11 Original Abstract Submitted
VARIABLE VOLTAGE BIT LINE PRECHARGE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
VARIABLE VOLTAGE BIT LINE PRECHARGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18601456 titled 'VARIABLE VOLTAGE BIT LINE PRECHARGE
Simplified Explanation
The patent application describes a memory device that operates memory cells at a first voltage level and precharges bit lines to a lower second voltage level.
- Memory device with memory cells
- Bit line connected to memory cells
- Power supply voltage input terminal for first voltage level operation
- Bit line precharge circuit precharges bit lines to a lower second voltage level
Key Features and Innovation
- Array of memory cells
- Bit line precharge circuit for precharging bit lines
- Operation at different voltage levels for memory cells and bit lines
Potential Applications
The technology can be used in various memory devices such as computer systems, mobile devices, and other electronic devices requiring memory storage.
Problems Solved
The technology addresses the need for efficient memory cell operation and bit line precharging in memory devices.
Benefits
- Improved memory cell performance
- Efficient precharging of bit lines
- Enhanced overall memory device operation
Commercial Applications
- Memory devices for consumer electronics
- Computer systems requiring high-speed memory access
Questions about Memory Device Technology
What are the key components of the memory device technology?
The key components include memory cells, bit lines, power supply voltage input terminal, and bit line precharge circuit.
How does the memory device technology improve memory device performance?
The technology improves memory device performance by operating memory cells at a first voltage level and precharging bit lines to a lower second voltage level.
Original Abstract Submitted
A memory device includes an array of memory cells, a bit line connected to the memory cells, and a power supply voltage input terminal configured to receive a power supply voltage at a first voltage level to operate the memory cells at the first voltage level. A bit line precharge circuit has an input terminal configured to receive the power supply voltage at the first voltage level, and the bit line precharge circuit is configured to precharge the bit lines to a second voltage level lower than the first voltage level.
